Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves

Version 1 : Received: 7 May 2024 / Approved: 7 May 2024 / Online: 7 May 2024 (14:11:43 CEST)

How to cite: Yang, H.-C.; Chi, S.-C.; Yang, H.-Y.; Yang, Y.-T. Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves. Preprints 2024, 2024050397. https://doi.org/10.20944/preprints202405.0397.v1 Yang, H.-C.; Chi, S.-C.; Yang, H.-Y.; Yang, Y.-T. Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves. Preprints 2024, 2024050397. https://doi.org/10.20944/preprints202405.0397.v1

Abstract

Abstract: NFinFET transistors with fin channel length 90nm and a planar MOSFET transistor with channel length 180nm and 90nm are presented with characteristic curves at various gate biases. A finalized algorithm with kink effects is effectively responsible for addressing the field effect transistors. The algorithm includes the modified conventional current-voltage formula and a nonlinear heat-associated kink solution which is simplified as a Gaussian form. Three parameters in modified model includes kN (related with channel width, channel length, and gate oxide capacitor, and proportional to the mobility of carriers)Vth(Threshold Voltage), and (the inverse of Early Voltage). Those parameters are determined to minimize the discrepancies between the measured data and the fitting values, but leave kinks located at around (VGS-Vth), which are deliberately eliminated by the Gaussian form because of the agitation of thermal kink effects. The whole fitting is made to be as close as the as-measured IDS-VDS. In the mean time, those determined parameters are physically meaningful after the analysis has been done.

Keywords

Keywords: FinFET,.Early Voltage, channel length and width

Subject

Engineering, Electrical and Electronic Engineering

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