Tantalum doped ZnO structures (ZnO:Ta) were synthesized and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pill made of a mixture of ZnO and Ta₂O₅ powders, and molecular hydrogen was used as a reactant gas. Percentage of tantalum was varied from 0 to 500 mg by varying the percentage of tantalum oxide in the mixture of the pill source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without contamination, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by EDS and XRD measurements. From SEM images from undoped samples exhibited mostly micro sized semi-spherical structures while doped samples displayed a trend to grown as nanocrystalline rods. The presence of tantalum during the synthesis affects the way of the growth. Green photoluminescence at naked eye was observed when Ta doped samples were illuminated by ultraviolet radiation and confirmed by PL spectra. PL intensity on Ta doped ZnO varied from those undoped samples up to 8 times.