Article
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Ferroelectric Resistance Switching in Epitaxial BiFeO3/ La0.7Sr0.3MnO3 Heterostructures
Version 1
: Received: 16 October 2023 / Approved: 16 October 2023 / Online: 17 October 2023 (08:21:01 CEST)
A peer-reviewed article of this Preprint also exists.
Qi, H.; Wu, W.; Chen, X. Ferroelectric Resistance Switching in Epitaxial BiFeO3/La0.7Sr0.3MnO3 Heterostructures. Materials 2023, 16, 7198. Qi, H.; Wu, W.; Chen, X. Ferroelectric Resistance Switching in Epitaxial BiFeO3/La0.7Sr0.3MnO3 Heterostructures. Materials 2023, 16, 7198.
Abstract
BiFeO3/La0.7Sr0.3MnO3 (BFO/LSMO) epitaxial heterostructures were successfully synthesized by pulsed laser deposition on (001)-oriented SrTiO3 single crystal substrates with Au top electrodes. Stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversal was observed in the Au/BFO/LSMO heterostructures. The conduction mechanism was revealed to follow the Schottky emission model, and the Schottky barriers in high resistance and low resistance states were estimated based on temperature-dependent current–voltage curves. Further, the observed memristive behavior was interpreted via the modulation effect on the depletion region width and the Schottky barrier height caused by ferroelectric polarization reversal, combining with the oxygen vacancies migration near the BFO/LSMO interface.
Keywords
resistance switching; interface; ferroelectric polarization; Schottky barrier
Subject
Chemistry and Materials Science, Materials Science and Technology
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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