Version 1
: Received: 10 May 2024 / Approved: 10 May 2024 / Online: 10 May 2024 (11:51:35 CEST)
How to cite:
Park, C.-S.; Kwon, Y.; Kim, H.; Kim, D. Y. Band Gap Formation and Semiconducting Properties of Graphene Adsorbed by Metal Oxide. Preprints2024, 2024050670. https://doi.org/10.20944/preprints202405.0670.v1
Park, C.-S.; Kwon, Y.; Kim, H.; Kim, D. Y. Band Gap Formation and Semiconducting Properties of Graphene Adsorbed by Metal Oxide. Preprints 2024, 2024050670. https://doi.org/10.20944/preprints202405.0670.v1
Park, C.-S.; Kwon, Y.; Kim, H.; Kim, D. Y. Band Gap Formation and Semiconducting Properties of Graphene Adsorbed by Metal Oxide. Preprints2024, 2024050670. https://doi.org/10.20944/preprints202405.0670.v1
APA Style
Park, C. S., Kwon, Y., Kim, H., & Kim, D. Y. (2024). Band Gap Formation and Semiconducting Properties of Graphene Adsorbed by Metal Oxide. Preprints. https://doi.org/10.20944/preprints202405.0670.v1
Chicago/Turabian Style
Park, C., Heetae Kim and Deuk Young Kim. 2024 "Band Gap Formation and Semiconducting Properties of Graphene Adsorbed by Metal Oxide" Preprints. https://doi.org/10.20944/preprints202405.0670.v1
Abstract
The band gap research in graphene is still a very important topic for materials application. Here, we report a band gap opening and p-type semiconducting property of the graphene by using an electrochemical doping on graphene surface. The manganese-oxide nanopar-ticles adsorbed on the graphene were used as the dopants in an electrolyte, which induce the band gap opening and the change of electronic structure. In addition, the fabricated graphene FET shows the p-type semiconductor behaviors. The temperature dependent conductivity of the p-type doped graphene at applied potential of 1.5 V during electro-chemical doping shows the formation of band gap of 0.23 eV, which is obtained from the fitting of conductivity equation. The semiconducting properties of manganese-oxide doped graphene is attributed to the formation of manganese-oxide nanoparticle on the surface of graphene.
Keywords
Graphene; Band gap; Chemical vapor deposition; Transistor; Metal-oxide
Subject
Physical Sciences, Applied Physics
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
