Influence of water concentration on the properties of fluorine-doped tin oxide (FTO) thin films was systematically studied in this work. Home made SISOM’s SPEED techniques and its chemical formulation was employed to grow the FTO on quartz substrate. Water concentration in the precursor solution was varied from 0, 0.5, 1.0 and 1.5 mol %. The structural, optical, and electrical properties of the films were studied under these deposition conditions. The results show that the properties of the films varied significantly with water concentration. Scanning electron microscopy (SEM) revealed FTO films whose grain size and uniformity increases significantly with increase in water concentration. The structure of the films was measured by X-ray diffraction (XRD) measurement. It shows polycrystalline films with (110), (101), (200), (211) and (220) orientation; the strength increases as water concentration increases. The optical transmission was determined by UV-Vis spectroscopy at 380–780 nm UV-VIS regions. The optical transmittance varies with water concentration with an average of 84%. The electrical property, measured by Hall Effect revealed n-type semiconductor. The films have the following properties: resistivity, 15 × 10-4Ω cm; carrier concentration, 18.7 × 1019 cm-3 and mobility of 21.86 cm2 V-1 s-1. The average figure of merit, φ of the FTO film is 1.25. Optimum deposition condition was established after series of experiments and was found to be 1.5% water concentration at 460oC substrate temperature. The FTO films deposited in this work could be a promising replacement to indium tin oxide (ITO) especially in dye-sensitized solar cells.