The main advantage of using the ferroelectric material as a component of complex heterostructure is the ability to tune various properties of the whole system by means of external electric field. In particular, the electric field may change the polarization direction within the ferroelectric material and consequently affect the structural properties, which in turn affects the electronic and magnetic properties of the neighboring material. Besides, the ferroelectrics proceed the electrostriction phenomenon, which is promising to be used to affect the magnetic states of interface state in the heterostructure with a magnetic component. The interfacial phenomena are of a great interest since they provide an extended functionality useful for electronic devices of a new generation. Following an idea of utilizing a ferroelectric in heterostructures component in the present work we consider 2DEG, Rashba effect, the effect of magnetoelectric coupling and magnetostriction in order to emphasize the advantages of such heterostructures as components of devices. For this purpose model systems of LaMnO3/BaTiO3, La2CuO4/BaTiO3, Bi/BaTiO3 and Bi/PbTiO3, Fe/BaTiO3 heterostructures are investigated by density functional theory calculations.