We report the growth of graphene at a low temperature using the cold wall chemical vapor deposition technique (CWCVD). Few layered (~6-8 layers) graphene were grown on nickel-coated silicon with acetylene as the precursor gas. The advantage of the combination of the acetylene (as a carbon feedstock) and the nickel catalyst was the lowering of the graphene growth temperature. Nickel coated silicon samples were pre-treated (heat treatment in inert atmosphere) before the growth and the effect of the pre-treatment on the catalyst as well as on the grown film was studied. The final samples were characterized with scanning electron microscopy and Raman spectroscopy. In CWCVD route, the heating of only the substrate holder enabled high heating and cooling rates, which, along with the control over partial pressure of the precursor gas had profound effect on the formation of graphene. In the best sample we have achieved almost equal intensity of the G and 2D peaks in Raman spectrum, which implied about ~6-8 layers of Graphene. The defect peak (the D band) was extremely small in the sample and it was attributed to the ripples and the underlying roughness of the nickel film. We analyzed that a proper choice of the thickness of catalyst layer and a higher cooling rate after graphene growth it would be possible to obtain monolayered graphene. Similar samples grown in a normal atmospheric CVD (with some engineered design to promote fast cooling) were also compared with the cold wall CVD grown samples and plasma assisted CWCVD, and cold-wall CVD demonstrated a better control over the quality of graphene film through the fast cooling and a controlled partial pressure of the precursor gas.