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Set-Up Method on Properties of BaXSr1-XTiO3 Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect

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Submitted:

06 October 2017

Posted:

09 October 2017

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Abstract
Thin films (100-400 nm) of BaxSr1-xTiO3 (0≤x≤1) deposited in RF-magnetron co-sputtering equipment are presented in this research work. The change of deposition rate, gap energy, and resistivity as a function of temperature- applied power change in the growth parameters was studied through the ISO colour-code lines constructed with MATLAB: By analysing the trend information and take into account the influence of the calculated "x" parameter with the Boltzmann profile fitting is proposed a method to allow a controlled set up of the RF-magnetron co-sputtering system and predict the Eg and resistivity values in the BaxSr1-xTiO3 solid solution with 0≤x≤1 for amorphous and crystalline phases. Also, a versatile tool to optimise the deposition process and material properties.
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Subject: Chemistry and Materials Science  -   Surfaces, Coatings and Films
Copyright: This open access article is published under a Creative Commons CC BY 4.0 license, which permit the free download, distribution, and reuse, provided that the author and preprint are cited in any reuse.
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