Article
Version 2
Preserved in Portico This version is not peer-reviewed
Effect of Gallium Incorporation on the Properties of ZnO Thin Films
Version 1
: Received: 11 January 2019 / Approved: 14 January 2019 / Online: 14 January 2019 (12:11:28 CET)
Version 2 : Received: 4 March 2019 / Approved: 5 March 2019 / Online: 5 March 2019 (11:23:31 CET)
Version 2 : Received: 4 March 2019 / Approved: 5 March 2019 / Online: 5 March 2019 (11:23:31 CET)
How to cite: Kurtaran, S.; Aldağ, S.; Öföfoğlu, G. Effect of Gallium Incorporation on the Properties of ZnO Thin Films. Preprints 2019, 2019010138. https://doi.org/10.20944/preprints201901.0138.v2 Kurtaran, S.; Aldağ, S.; Öföfoğlu, G. Effect of Gallium Incorporation on the Properties of ZnO Thin Films. Preprints 2019, 2019010138. https://doi.org/10.20944/preprints201901.0138.v2
Abstract
Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.
Keywords
Ga-doped ZnO; chemical spray technique; XRD; AFM; Optical properties; Electrical properties.
Subject
Chemistry and Materials Science, Surfaces, Coatings and Films
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Comments (0)
We encourage comments and feedback from a broad range of readers. See criteria for comments and our Diversity statement.
Leave a public commentSend a private comment to the author(s)
* All users must log in before leaving a comment