Multiple Transitions in Half-Ring Chains with Varying Linewidth

Six Half-ring with varying linewidth from 120nm to 370nm were connected in series on five corners. The magnetization reversal processes were investigated by the measurement of anisotropic magnetoresistances (AMR). The number of switching jumps in the AMR loops, from zero to five, varied with the longitudinal applied field. These discrete jumps result from domain wall nucleating and depinning on the corners. The larger external field applied the fewer number of jumps in the MR curve. This reproducible and particular-respondence of domain wall device in pattern of half-ring wire might be the new promising magnetoelectronic devices.