In this work, a highly efficient, molybdenum disulfide (MoS2) based near infrared (NIR) heterojunction photodetector is fabricated on a Si substrate using a cost-effective and simple drop casting method. A non-stoichiometric and inhomogeneous MoS2 layer with a S/Mo ratio of 2.02 is detected using energy dispersive X-ray spectroscopy and field emission scanning electron microscope analysis. Raman shifts are noticed at 382.42 cm-1 and 407.97 cm-1, validating MoS2 thin film growth with a direct bandgap of 2.01 eV. The fabricated n-MoS2/p-Si photodetector is illuminated with a 785 nm laser at different intensities, and demonstrate the ability of the photodetector to work in both regions, the forward biased and reverse biased from above 1.5 V and less than -1.0 V. The highest responsivity, R is calculated to be 0.52 A/W while the detectivity D* is 4.08 x 10^10 Jones for an incident light intensity of 9.57 mW/cm2. The minimum rise and fall times are calculated as 1.77 ms and 1.31 ms for an incident laser power of 9.57 mW/cm^2 and 6.99 mW/cm^2 respectively at a direct current bias voltage of 10 V. The demonstrated results are promising for the low-cost fabrication of a thin MoS2 film for photonics and optoelectronic device applications.