Mixed cadmium tellurides – cadmium sulfides thin layers were formed on the polyamide PA 6. Monotelluropentathionic acid (H2TeS4O6) was used as precursor of tellurium and sulfur. We applied a low-temperature, nontoxic and cost-effective SILAR method. Cadmium telluride (CdTe) and sulfide (CdS) layers were formed through consecutive reactions of sorbed/diffused chalcogens species from telluropentathionate anion (TeS4O62–) with functional groups of polyamide and alkaline cadmium sulfate. The pseudo-second-order rate and Elovich kinetic models best fitted to quantify an uptake of chalcogens and cadmium on PA6. The effects of chalcogens and Cd on the structure and optical properties of PA6 were characterized using UV/Vis and IR spectra. The clear changes of these properties found in dependence on the concentration and exposure time in precursor's solutions. Fourier transform infrared spectroscopy and an ultraviolet-visible spectroscopy were applied in order to evaluate the effect of the chalcogens having particles on the changes in structure of polyamide 6 films depending on the exposure time in the solution of the chalcogens precursor and its concentration. The optical band gap energy of formed layers was found to be in the order of 1.52–2.36 eV. Studies of scanning electron microscopy and atomic force microscopy reveal that the diameter of the average grain is about 30 nm. The grains are conical in shape and unevenly distributed all over the surface of the substrate.