Recently, the interest in silicon-based detectors capable of detecting single photons in the near-infrared is growing mainly due to LiDAR applications, autonomous driving in particular. Silicon single-photon avalanche diodes are one of the most interesting single-photon NIR technology available on the market, nevertheless, their efficiency is hindered by the low absorption coefficient of Si in the NIR. The idea is the integration of CMOS-compatible nanostructures, specifically, silver grating array supporting Surface Plasmons Polaritons (SPPs), to confine superficially the incoming NIR photons and therefore increase photons probability to generate an electron-hole pair. The plasmonic silver array is geometrically fine-tuned using time domain simulation software to achieve maximum detector performance at 950 nm. Then, the plasmonic silver array is integrated by means of the focused ion beam technique on the detector. Finally, the integrated detector is electro-optically characterized, demonstrating a quantum efficiency of 13 at 950 nm, 2,2 times more than the reference detector. This result suggests the production of a device capable of detecting single NIR photons, at a very low cost and compatible with CMOS, thus integrable on existing technology platforms.