1. Introduction
Compared with FeAs-based superconductors, the 11 iron-based superconductors have the advantages of simplest crystal structure and non-toxicity. FeSe consists solely of edge-sharing trtrahedral FeSe
4 layers stacked along the
c-axis, without charge storage layer [
1,
2,
3]. A structural transition from tetragonal to orthorhombic occurs at about
Ts ~ 90 K accompanied by the nematic phase [
4,
5,
6,
7]. Despite having a relatively low superconducting critical temperature (
Tc) of approximately 9 K, high tunability and nematicity without magnetic order have garnered significant attention and research interest. Under high pressure, the
Tc of FeSe can be elevated to approximately 38 K, and a new magnetic order emerges within a specific pressure range once the nematic phase is suppressed [
8,
9,
10,
11]. Chemical methods, such as intercalation [
12,
13], ionic liquid gating [
14,
15,
16] and potassium deposition [
17,
18], have been employed to raise
Tc to over 40 K. Remarkably, monolayer FeSe films on doped SrTiO
3 substrates have exhibited superconductivity with
Tc surpassing 65 K [
19,
20].
The substitution of isovalent sulfur (S) in FeSe, equivalent to applying positive chemical pressure, has proven to be an effective method for tuning superconductivity and nematic order. With S doping, the nematic transition temperature
Ts gradually decreases until it vanished at
x ~ 0.17, marking a nonmagnetic nematic quantum critical point (QCP) [
21,
22,
23,
24]. Nuclear magnetic resonance (NMR) measurements indicate a strong suppression of antiferromagnetic (AFM) fluctuations with S substitution, resulting in negligible AFM fluctuations near the QCP [
23]. Within the nematic regions,
Tc exhibits a small superconducting dome, reaching a maximum of 11 K at
x ~ 0.11. Beyond the nematic regions, superconductivity is gradually suppressed, reaching a minimum at
x ~ 0.45, after which
Tc slowly increases until
x = 1 [
25]. Notably, unlike when external pressure is applied, no new magnetic order emerges after the nematic phase [
25,
26,
27].
Similarly, the substitution of isovalent tellurium (Te) in FeSe, equivalent to applying negative chemical pressure, is an effective method for tuning the superconductivity and various ordered states. In FeSe
1-xTe
x single crystals phase diagram,
Ts linearly decreases until it disappears at
x = 0.5 with Te doping [
28,
29,
30].
Tc initially decreases to a minimum at
x ~ 0.3 and then increases to a maximum at
x ~ 0.6; subsequently,
Tc is gradually suppressed and antiferromagnetic (AFM) behavior emerges when
x > 0.9 [
28,
29,
31,
32,
33]. FeTe undergoes a tetragonal-to-monoclinic structural transition at around 70 K, exhibiting AFM behavior without superconductivity, reminiscent of the emergence of superconductivity from AFM in the cuprate superconductors [
34,
35,
36,
37,
38]. The unique phase diagram of 11 iron-based superconductors, with its interplay of competing orders, nematic phase, magnetic order and superconductivity, provides important insights for exploring the mechanism of high-temperature superconductivity.
Unfortunately, preparing high-quality single crystals is one of the challenges in the study of the 11 iron-based superconducting system, particularly FeSe
1-xTe
x and FeSe
1-xS
x. This difficulty is also commonly encountered in the study of other iron-based superconducting families. On the one hand, the low chemical stability of FeSe
1-xS
x and the issue of phase separation in FeSe
1-xTe
x (0 <
x < 0.5) make it arduous to obtain single crystals or single phase samples using traditional solid-state reactions [
39,
40,
41,
42,
43]. On the other hand, even though the preparation of single crystals of FeSe
1-xTe
x (0.5 ≤
x ≤ 1) is relatively straightforward using the self-flux method, the presence of excess Fe significantly affects the investigation of their intrinsic properties, such as the localization of charge carriers [
44,
45,
46], spin glass phase [
47] and incoherent electronic states [
45,
48]. It is difficult to prepare high-quality single crystals of the 11 system using traditional solid-state reaction methods, and new methods are gradually developed.
To synthesize high quality single crystals across the entire doping range, different methods need to be employed. In this review, we provide an overview of the common synthesis methods for 11 iron-based system, focusing on the optimal method for different doping regions, along with a relevant phase diagram of the entire region. Initially, we discuss the conventional methods of obtaining FeSe single crystals, namely the flux method and chemical vapor transport (CVT). In section 3, we describe the preparation of FeSe1-xSx single crystals using CVT for range 0 ≤ x ≤ 0.29 and the hydrothermal method for the entire region. In section 4, we explain how high quality FeSe1-xTex (0 ≤ x ≤ 0.5) single crystals can be directly synthesized via CVT. For the Te-high doping region (0.5 < x ≤ 1), it becomes necessary to anneal the as-grown single crystals in O2 or Te vapor. Finally, we conclude the review with a summary and outlook in section 5.
5. Single Crystal Growth and Superconductivity of FeTe1-xSx
FeTe
1-xS
x system also exhibits superconductivity. Yoshikazu Mizuguchi et al. first reported the superconductivity in FeTe
1-xS
x system and found that
Tc can reach 10 K when
x is 0.2 [
97]. FeTe
1-xS
x single crystals with low S doping were grown using self-flux method, similar to FeSe
1-xTe
x (0.5 <
x ≤ 1) single crystals [
98,
99,
100,
101,
102]. Annealing treatment is also necessary to improve superconductivity for FeTe
1-xS
x single crystals although the excess Fe cannot be completely removed [
103,
104,
105,
106,
107,
108]. The solubility limit of S in FeTe is about 12% and Chiheng Dong et al. provided the phase diagram in this region [
106,
109]. With S doping, AFM is suppressed and superconductivity is enhanced.
Caiye Zhao et al. successfully synthesized a series of FeS
1-xTe
x (0 ≤
x ≤ 0.15) single crystals by a hydrothermal method for the first time and provided a phase diagram of FeS
1-xTe
x single crystals, shown in
Figure 15 [
110].
Tc is rapidly suppressed with the Te doping for FeS
1-xTe
x (0 ≤
x ≤ 0.15) single crystals and finally disappears when
x > 0.1. Due to the large solution limited region, only a small amount of doping can be applied at both ends of the phase diagram. The complete phase diagram needs further exploration.
6. Conclusions
In conclusion, significant progress has been made in the preparation of 11 system single crystals, including FeSe
1-xTe
x and FeSe
1-xS
x, through various methods. A comprehensive phase diagram has been constructed, as depicted in
Figure 16, summarizing the superconducting transition temperatures (
Tc), the onset of nematic phase (
Ts), and the Néel temperature (
TN) for the single crystals prepared using the optimal techniques in different intervals.
High quality FeSe1-xSx (0 ≤ x ≤ 0.29) and FeSe1-xTex (0 ≤ x ≤ 0.55) single crystals are typically grown using CVT method with AlCl3/KCl transport agent. It is fortuitous that the range encompassing these single crystals includes the nematic phase without magnetic order. The exceptional quality of these crystals serves as an excellent platform for investigating the interplay between nematicity and superconductivity. FeSe1-xSx (0.29 ≤ x ≤ 1) single crystals, however, can only be synthesized using hydrothermal method. Although the quality of single crystals using hydrothermal is slightly inferior to those grown using CVT, they still hold great significance for studying the complete phase diagram of FeSe1-xSx. By utilizing the self-flux plus annealing technique, single crystals without excess Fe in the highly Te doping region can be obtained. In this particular region, Tc reaches maximum of the entire phase diagram, approximately 15 K, occurring around x (Te) ~ 0.6. Furthermore, AFM state is observed within a narrow region around FeTe. In summary, the establishments of the comprehensive phase diagram for the 11 iron-based system is of utmost importance for unraveling the mechanism behind high-temperature superconductivity and for discovering novel superconducting materials.