1. Introduction
The discovery and utilization of optical fibers have led to substantial advancements in information exchange processes, which continue to evolve today, as well as in the measurement of various magnitudes, as strain and temperature 1. The combination of an optical fiber with and embedded FBG and coated with a magnetostrictive material opens a new field of sensors, as magnetic field sensors and current sensors 2. The adoption of optical fibers has solved numerous issues, including signal loss and noise, that were previously encountered with initial electrical sensors.
To date, the most commonly employed optical sensors are those based on diffraction Bragg gratings (FBG). An FBG have unique characteristics that render it suitable for use as a sensor 1. An FBG is a structure based on a periodic alteration of the refractive index situated within a standard single-mode optical fiber segment, typically reduced to a few millimeters in length. It is distinguished by its periodic, resonant, and spatial attributes. Moreover, it alters the refractive index within the fiber’s core, where multiple interfaces exist between regions with different refractive indices. At each of these interfaces, a portion of the light signal injected in the fiber is reflected (the FBG acts as a selective wavelength optical reflector), while the rest of the wavelength are transmitted. The FBG behaves like an optical filter, reflecting a specific wavelength and transmitting the rest of the spectrum 4. The wavelength at which the maximum reflectivity is produced, is known as the Bragg wavelength.
The Bragg wavelength is given by:
where
is the effective refractive index of the fiber core and
is the physical period of the induced refractive index modulation. Under strain or temperature changes, the Bragg wavelength suffers a shift that can be expressed as the sum of the effects of these two contributions 4:
The first term of the relative variation of the Bragg wavelenght represents the strain dependence, where and are the coefficients of the strain-optic tensor, is the Poisson ratio and is the strain. The second term shows the temperature dependence of the relative variation of the Bragg wavelenght, whereis the thermal expansion coefficient of the optical fiber and is the thermal coefficient of the effective refractive index.
FBG offers a wide range of applications, as optical reflectors, optical filters or as an optical device embedded in an optical fiber. FBG-based sensors have gained significant importance in today’s technology 5. FBG are employed in numerous applications, primarily due to the significant advantages they offer 6: they offer reduced insertion loss since they are fabricated within an optical fiber 7, they function as highly selective wavelength filters, they are tunable, both through strain and temperature; in other words, changes in these parameters impact the refractive index and the period of the Bragg grating of the FBG and they are immune to electromagnetic interference. Although these applications are predominantly found in optical communications, the utilization of FBGs in sensing is also widespread. This is attributed to their distinctive characteristics, as they are well-suited for temperature and strain sensing. Consequently, parameters that induce changes in temperature and strain can also be effectively measured with and FBG embedded in an optical fiber, such as strain, pressure, temperature, magnetic field, current, or any other magnitude that can be transduced to a strain or temperature.
One of the most intriguing research areas involving FBG-based sensors is the exploration of magnetostriction. Magnetostriction is a phenomenon observed in ferromagnetic materials, causing them to change its dimensions (strain change) when subjected to a magnetic field. By utilizing key magnetostrictive materials, such as Nickel, Terfenol-D, or Galfenol (which will be extensively discussed in this study), and depositing them on various substrates such as thin films 9, nanowires 13, or cantilevers 15, researchers have gained insights into the behavior of this property. This has led to the discovery of advanced applications in microactuators 17 and cutting-edge sensors, including MEMS devices 18. Research in magnetostrictive sensors based on FBGs and magnetostritive material has been extensive. These sensors are designed for measuring magnetic fields, electric current, and temperature. When a magnetostrictive material like Galfenol or Terfenol-D becomes magnetized, it experiences a deformation that is transmitted to the substrate on which it is applied 2. In the context of this research, the optical fiber with an embedded FBG and coated by a high magnetostrictive material undergoes either stretching or compression alongside the composite material, and this strain of the FBG results in a change in the grating period and, consequently, alters the Bragg wavelength.
The mechanism of magnetostriction at the atomic level is a relatively complex topic. However, it can be divided into two distinct processes at the macroscopic level. The first process involves the deformation of the domain walls within the material in response to external magnetic fields. The second process is the rotation of these domains. These two mechanisms enable the material to alter the orientation of the domains, leading to a change its dimensions. Because this deformation is isometric, there is a corresponding dimensional change in the orthogonal direction 19. While there can be multiple pathways to achieve domain reorientation, the fundamental concept is that the rotation and movement of the magnetic domains result in a physical change or deformation in the material.
Figure 1.
Sketch of the operation of a Fiber Bragg Grating.
Figure 1.
Sketch of the operation of a Fiber Bragg Grating.
Figure 2.
(a) Sputtering mask with 3 optical fibers with an FBG in the center of the fiber where the plastic cover has been removed (in the yellow boxes). Nickel sputtered optical fiber with a thickness of 100nm, (b) Optical fiber after nickel chemical deposition of 5µm thickness.
Figure 2.
(a) Sputtering mask with 3 optical fibers with an FBG in the center of the fiber where the plastic cover has been removed (in the yellow boxes). Nickel sputtered optical fiber with a thickness of 100nm, (b) Optical fiber after nickel chemical deposition of 5µm thickness.
Figure 3.
SEM and EDX images of an optical fiber covered by Ni and Fe. These images reflects the deposited layers on the optical fiber. (a) SEM image of a sample where can be seen the optical fiber with a 135 μm diameter and the first layer of chemical deposition layer of Ni and the Fe layer by electrodeposition, (b) EDX image of the Ni layer (~5μm thickness) deposited on the optical fiber by chemical deposition, (c) EDX image of the Si due to the SiO2 of the optical fiber, (d) EDX of Fe layer (~30 μm thickness, attempt to electroplate GaxFe1-x, but only Fe was deposited as the density of current employed was over 40mA/cm2, with 7mA on an optical fiber of 3.5cm length), (e) EDX image of the O due to the SiO2 in the optical fiber.
Figure 3.
SEM and EDX images of an optical fiber covered by Ni and Fe. These images reflects the deposited layers on the optical fiber. (a) SEM image of a sample where can be seen the optical fiber with a 135 μm diameter and the first layer of chemical deposition layer of Ni and the Fe layer by electrodeposition, (b) EDX image of the Ni layer (~5μm thickness) deposited on the optical fiber by chemical deposition, (c) EDX image of the Si due to the SiO2 of the optical fiber, (d) EDX of Fe layer (~30 μm thickness, attempt to electroplate GaxFe1-x, but only Fe was deposited as the density of current employed was over 40mA/cm2, with 7mA on an optical fiber of 3.5cm length), (e) EDX image of the O due to the SiO2 in the optical fiber.
Figure 4.
: saturation magnetostriction for bulk Fe1-x Gax. Reproduced graph from “Magnetization, Magnetic Magnetization, Anisotropy and Magnetostriction of Galfenol Alloys”, A. E. Clark, M. Wun-Fogle, and J. B. Restorff. Navsea, warfare centers, 2005 University of Maryland. Furnace cooled and multi-phase can have a magnetostriction constant below 150.
Figure 4.
: saturation magnetostriction for bulk Fe1-x Gax. Reproduced graph from “Magnetization, Magnetic Magnetization, Anisotropy and Magnetostriction of Galfenol Alloys”, A. E. Clark, M. Wun-Fogle, and J. B. Restorff. Navsea, warfare centers, 2005 University of Maryland. Furnace cooled and multi-phase can have a magnetostriction constant below 150.
Figure 5.
Electrodeposition system with three electrodes.
Figure 5.
Electrodeposition system with three electrodes.
Figure 6.
Electrodeposition system with a current source.
Figure 6.
Electrodeposition system with a current source.
Figure 7.
(a) Schematic of the coil system for measuring hysteresis loops. (b) Image of the driven coil for the magnetic field generation with a driven magnetic field sensitivity of 7,7 kA/m.A. (c) Image of the pick-up coils for the measurement of the magnetization of the sample. Exciter coil with characteristics: N1=140, N2=10, l=14cm.
Figure 7.
(a) Schematic of the coil system for measuring hysteresis loops. (b) Image of the driven coil for the magnetic field generation with a driven magnetic field sensitivity of 7,7 kA/m.A. (c) Image of the pick-up coils for the measurement of the magnetization of the sample. Exciter coil with characteristics: N1=140, N2=10, l=14cm.
Figure 8.
(a) General scheme of the structure of the complete system used to obtain the hysteresis cycles of a magnetic sample. (b) Measuring system and assembled in the laboratory in order to obtain and capture the magnetic hysteresis cycles of the manufactured samples.
Figure 8.
(a) General scheme of the structure of the complete system used to obtain the hysteresis cycles of a magnetic sample. (b) Measuring system and assembled in the laboratory in order to obtain and capture the magnetic hysteresis cycles of the manufactured samples.
Figure 9.
EDX analysis of the sample 1, giving the percentage between Ga and Fe (see
Table 4).
Figure 9.
EDX analysis of the sample 1, giving the percentage between Ga and Fe (see
Table 4).
Figure 10.
(a) SEM image of an optical fiber covered by a 7μm thickness of FeGa; with 24% of Ga and 76% Fe, measured by EDX (
Table 4), (b) Detail of the 7μm thickness of Galfenol where it can be seen a Ni layer of 1μm thickness deposited by chemical deposition between Galfenol and the optical fiber.
Figure 10.
(a) SEM image of an optical fiber covered by a 7μm thickness of FeGa; with 24% of Ga and 76% Fe, measured by EDX (
Table 4), (b) Detail of the 7μm thickness of Galfenol where it can be seen a Ni layer of 1μm thickness deposited by chemical deposition between Galfenol and the optical fiber.
Figure 11.
Magnetostriction measurement of sample 1, measured applying a triangular current of 6A amplitude (92kA/m). Saturation is gotten for a current of 1A, which corresponds to a magnetic field of 7,7kA/m. The magnetostriction is only around 4pm in Δλ which correspond to a magnetostriction λS = 4.5. It has to be to consider that a Galfenol thickness of 7μm is stressing an optical fiber of 125μm in diameter.
Figure 11.
Magnetostriction measurement of sample 1, measured applying a triangular current of 6A amplitude (92kA/m). Saturation is gotten for a current of 1A, which corresponds to a magnetic field of 7,7kA/m. The magnetostriction is only around 4pm in Δλ which correspond to a magnetostriction λS = 4.5. It has to be to consider that a Galfenol thickness of 7μm is stressing an optical fiber of 125μm in diameter.
Figure 12.
(a) SEM of sample 2. It can be seen the optical fiber in the center and a layer of 126μm thickness of Galfenol, (b) Detail of the Ni layer of 7 µm thickness grown by chemical deposition.
Figure 12.
(a) SEM of sample 2. It can be seen the optical fiber in the center and a layer of 126μm thickness of Galfenol, (b) Detail of the Ni layer of 7 µm thickness grown by chemical deposition.
Figure 13.
Sample 2, (a) current density versus radius, (b) Gallium percentage versus current density. With manufacture parameters of 2.5 mA constant current and pH of 4.2.
Figure 13.
Sample 2, (a) current density versus radius, (b) Gallium percentage versus current density. With manufacture parameters of 2.5 mA constant current and pH of 4.2.
Figure 14.
(a),(b) SEM image of sample 2. Optical fiber diameter 135µm and Galfenol width of 128µm. Points with a number are where the EDX analysis have been done, (c) EDX image of Fe and, (d,f) EDX image of Si of the SiO2 from the optical fiber, (e) EDX image of Ga, (f) EDX image of O from the SiO2 of the optical fiber.
Figure 14.
(a),(b) SEM image of sample 2. Optical fiber diameter 135µm and Galfenol width of 128µm. Points with a number are where the EDX analysis have been done, (c) EDX image of Fe and, (d,f) EDX image of Si of the SiO2 from the optical fiber, (e) EDX image of Ga, (f) EDX image of O from the SiO2 of the optical fiber.
Figure 15.
(a) image captured in the oscilloscope with the sinusoidal signal proportional to the current in the driven coil (orange signal) and the voltage induced in the pick-up coil (blue signal), (b) current in the driven coil (orange) and the integration of the signal from the pick-up coils (blue).
Figure 15.
(a) image captured in the oscilloscope with the sinusoidal signal proportional to the current in the driven coil (orange signal) and the voltage induced in the pick-up coil (blue signal), (b) current in the driven coil (orange) and the integration of the signal from the pick-up coils (blue).
Figure 16.
hysteresis loops of sample 10 at (a) 14 Hz, (b) 28 Hz, (c) 43 Hz.
Figure 16.
hysteresis loops of sample 10 at (a) 14 Hz, (b) 28 Hz, (c) 43 Hz.
Figure 17.
(a) optical image of sample 2, (b) magnetostriction measurement applying a square signal of 70kA/m. The saturation magnetostriction is 8pm.
Figure 17.
(a) optical image of sample 2, (b) magnetostriction measurement applying a square signal of 70kA/m. The saturation magnetostriction is 8pm.
Figure 18.
Sample 3 grown in two zones, first stretch with 2.5mA and pH 3.9 and second stretch with 7.5mA and pH 4.4 (a) current density versus radius, (b) Ga percentage versus radius, (c) Ga percentage versus current density.
Figure 18.
Sample 3 grown in two zones, first stretch with 2.5mA and pH 3.9 and second stretch with 7.5mA and pH 4.4 (a) current density versus radius, (b) Ga percentage versus radius, (c) Ga percentage versus current density.
Figure 19.
(a) SEM image of sample 3. Optical fiber diameter 135µm and Galfenol width of 430µm, (b) EDX image of Fe and (c) EDX image of Ga (x marks on the image are the EDX measurement points to get the percentage of Ga).
Figure 19.
(a) SEM image of sample 3. Optical fiber diameter 135µm and Galfenol width of 430µm, (b) EDX image of Fe and (c) EDX image of Ga (x marks on the image are the EDX measurement points to get the percentage of Ga).
Figure 20.
Sample 4, grown in two zones, first stretch with 2.5mA and pH 5.9 and second stretch with 12.5mA and pH 5.9 (a) Current density versus radius, (b) Ga percentage versus current density.
Figure 20.
Sample 4, grown in two zones, first stretch with 2.5mA and pH 5.9 and second stretch with 12.5mA and pH 5.9 (a) Current density versus radius, (b) Ga percentage versus current density.
Figure 21.
(a) SEM image of sample 3. Optical fiber diameter 135µm and Galfenol width of 430µm, (b) EDX image of Fe and (c) EDX image of Ga (x marks on the image are the EDX measurement points).
Figure 21.
(a) SEM image of sample 3. Optical fiber diameter 135µm and Galfenol width of 430µm, (b) EDX image of Fe and (c) EDX image of Ga (x marks on the image are the EDX measurement points).
Figure 22.
Sample 4, grown in two zones, first stretch with 3mA and pH 4 and second stretch with 4.5mA and pH 4.5 (a) current density versus radius, (b) Ga percentage versus radius for the two currents and pH, (b) Ga percentage versus current density for both currents and pH.
Figure 22.
Sample 4, grown in two zones, first stretch with 3mA and pH 4 and second stretch with 4.5mA and pH 4.5 (a) current density versus radius, (b) Ga percentage versus radius for the two currents and pH, (b) Ga percentage versus current density for both currents and pH.
Figure 23.
(a) SEM image of sample 5. Optical fiber diameter 135µm and Galfenol width of 200µm, (b) zoom of the Galfenol layer where can be seen a quite homogeneous texture of the Galfenol.
Figure 23.
(a) SEM image of sample 5. Optical fiber diameter 135µm and Galfenol width of 200µm, (b) zoom of the Galfenol layer where can be seen a quite homogeneous texture of the Galfenol.
Figure 24.
(a) SEM image of sample 6. Optical fiber diameter 135µm and Galfenol width of 280µm, (b) Current density versus radius, (c) percentage of Ga versus radius, (d) percentage of Ga versus current density.
Figure 24.
(a) SEM image of sample 6. Optical fiber diameter 135µm and Galfenol width of 280µm, (b) Current density versus radius, (c) percentage of Ga versus radius, (d) percentage of Ga versus current density.
Figure 25.
Sample 7, grown in two zones, first stretch with 3mA and pH 5 and second stretch with 4.5mA and pH 5, (a) current density versus radius, (b) percentage of Ga versus radius, (c) Ga percentage versus current density.
Figure 25.
Sample 7, grown in two zones, first stretch with 3mA and pH 5 and second stretch with 4.5mA and pH 5, (a) current density versus radius, (b) percentage of Ga versus radius, (c) Ga percentage versus current density.
Figure 26.
(a) SEM image of sample 7 with 207μm of thickness of Galfenol, (b) Rugosity and uniformity of electrodeposition of Galfenol with different pH, (b) sample 6 grown with pH 4.5, (c) sample 7 grown with pH 5.
Figure 26.
(a) SEM image of sample 7 with 207μm of thickness of Galfenol, (b) Rugosity and uniformity of electrodeposition of Galfenol with different pH, (b) sample 6 grown with pH 4.5, (c) sample 7 grown with pH 5.
Figure 27.
Sample 8, grown with 5mA and pH 5, (a) current density versus radius, (b) percentage of Ga versus radius, (c) Ga percentage versus current density.
Figure 27.
Sample 8, grown with 5mA and pH 5, (a) current density versus radius, (b) percentage of Ga versus radius, (c) Ga percentage versus current density.
Figure 28.
(a) SEM image of an optical fiber covered by a 97μm thickness of Galfenol, (b) plot of magnetostriction applying a square unipolar magnetic field to saturation, getting a magnetostriction of 9pm measured with the wavelength shift which corresponds to a 9.9 με of magnetostriction.
Figure 28.
(a) SEM image of an optical fiber covered by a 97μm thickness of Galfenol, (b) plot of magnetostriction applying a square unipolar magnetic field to saturation, getting a magnetostriction of 9pm measured with the wavelength shift which corresponds to a 9.9 με of magnetostriction.
Figure 29.
Sample 9, grown with 6mA and pH 4.5, (a) current density versus radius, (b) percentage of Ga versus radius, (c) Ga percentage versus current density.
Figure 29.
Sample 9, grown with 6mA and pH 4.5, (a) current density versus radius, (b) percentage of Ga versus radius, (c) Ga percentage versus current density.
Figure 30.
Hysteresis loop of sample 9, (a) as cast, (b) after current and temperature annealing with 400mA during 30 minutes and temperature of 350 ºC.
Figure 30.
Hysteresis loop of sample 9, (a) as cast, (b) after current and temperature annealing with 400mA during 30 minutes and temperature of 350 ºC.
Table 1.
Solution of electroless nickel plating.
Table 1.
Solution of electroless nickel plating.
Component |
250 mL |
Nickel Chloride (NiCl2) |
14 g |
Sodium Citrate (Na3 C6H5O7) |
25 g |
Sodium Hypophosphite (NaP O2H2) |
22.5 g |
Table 2.
Solution for Galfenol Electrodeposition.
Table 2.
Solution for Galfenol Electrodeposition.
Component |
Concentration (M) |
500 mL |
Gallium Sulphate (Ga2(SO4)3) |
0.06 |
12.83 g |
Iron Sulphate (FeSO4) |
0.03 |
4.17 g |
Boric Acid (H3BO3) |
0.50 |
15.46 g |
Sodium Citrate (Na3C6H5O7) |
0.15 |
19.74 g |
Ascorbic Acid (C6H8O6) |
0.04 |
3.52 g |
Table 3.
Manufacture parameters of sample 1.
Table 3.
Manufacture parameters of sample 1.
Sample 1 |
Optical Fiber (OF) |
OF + Sputtering (S) + Chemical Deposition (CHD) |
OF + S + CHD + Electrodeposition (ELD) |
Diameter |
135 µm |
137 µm |
151 µm |
Length |
3.5 cm |
3.5 cm |
3.5 cm |
Surface |
- |
0.15 cm² |
0.17 cm² |
Current |
- |
3 mA |
3 mA |
Current Density |
- |
19.9 mA/cm² |
18.1 mA/cm² |
pH |
- |
- |
2.5 |
Time |
- |
- |
12 h |
Table 4.
EDX of sample 1 with the percentage of Ga and Fe.
Table 4.
EDX of sample 1 with the percentage of Ga and Fe.
Element |
Line Type |
Apparent Concentration |
k Ratio |
Wt% |
Wt% Sigma |
Fe |
K series |
47,4 |
0,47402 |
75,87 |
0,32 |
Ga |
K series |
14,03 |
0,13151 |
24,13 |
0,32 |
Total: |
|
|
|
100 |
|
Table 5.
Manufacture parameters of sample 2.
Table 5.
Manufacture parameters of sample 2.
Sample 2 |
OF |
OF + S + CHD |
OF + S + CHD + ELD |
Diameter |
135 µm |
143 µm |
395 µm |
Length |
3.2 cm |
3.2 cm |
3.2 cm |
Surface |
- |
0.144 cm² |
0.397 cm² |
Current |
- |
4 mA |
4 mA |
Current Density |
- |
27.8 mA/cm² |
10.1 mA/cm² |
pH |
- |
- |
4.2 |
Time |
- |
- |
92 h |
Table 6.
Manufacture parameters of sample 3.
Table 6.
Manufacture parameters of sample 3.
Sample 3 |
OF |
OF + S + CHD |
OF + S + CHD + ELD |
OF + S + CHD + ELD |
Diameter |
135 µm |
147 µm |
540 µm |
1000 µm |
Length |
2.5 cm |
2.5 cm |
2 cm |
2 cm |
Surface |
- |
0.115 cm² |
0.34 cm² |
0.628 cm² |
Current |
- |
2.5 mA |
7.5 mA |
7.5 mA |
Current Density |
- |
21.6 mA/cm² |
22.1 mA/cm² |
11.9 mA/cm² |
pH |
- |
3.9 |
3.9 |
4.4 |
Time |
- |
- |
48 h |
96 h |
Table 7.
Manufacture parameters of sample 4.
Table 7.
Manufacture parameters of sample 4.
Sample 4 |
OF |
OF + S + CHD |
OF + S + CHD + ELD |
OF + S + CHD + ELD |
Diameter |
135 µm |
150 µm |
630 µm |
1017 µm |
Length |
2.5 cm |
2.5 cm |
2.5 cm |
2.5 cm |
Surface |
- |
0.118 cm² |
0.49 cm² |
0.80 cm² |
Current |
- |
2.5 mA |
12.5 mA |
12.5 mA |
Current Density |
- |
23.4 mA/cm² |
25.7 mA/cm² |
15.9 mA/cm² |
pH |
- |
5.9 |
5.9 |
5.9 |
Time |
- |
- |
48 h |
96 h |
Table 8.
Manufacture parameters of sample 5.
Table 8.
Manufacture parameters of sample 5.
Sample 5 |
OF |
OF + S + CHD |
OF + S + CHD + ELD |
OF + S + CHD + ELD |
Diameter |
135 µm |
145 µm |
384 µm |
536 µm |
Length |
2.5 cm |
2.5 cm |
2.5 cm |
2.5 cm |
Surface |
- |
0.118 cm² |
0.30 cm² |
0.42 cm² |
Current |
- |
3 mA |
4.5 mA |
4.5 mA |
Current Density |
- |
25.4 mA/cm² |
15 mA/cm² |
10.7 mA/cm² |
pH |
- |
- |
4 |
4.5 |
Time |
- |
- |
48 h |
96 h |
Table 9.
Manufacture parameters of sample 6.
Table 9.
Manufacture parameters of sample 6.
Sample 6 |
OF |
OF + S + CHD |
OF + S + CHD + ELD |
OF + S + CHD + ELD |
Diameter |
135 µm |
143 µm |
340 µm |
703 µm |
Length |
2.5 cm |
2.5 cm |
1.6 cm |
1.6 cm |
Surface |
- |
0.107 cm² |
0.192 cm² |
0.397 cm² |
Current |
- |
3 mA |
4.5 mA |
4.5 mA |
Current Density |
- |
27.8 mA/cm² |
23.4 mA/cm² |
11.3 mA/cm² |
pH |
- |
- |
4.5 |
4.5 |
Time |
- |
- |
48 h |
96 h |
Table 10.
Manufacture parameters of sample 7.
Table 10.
Manufacture parameters of sample 7.
Sample 7 |
OF |
OF + S + CHD |
OF + S + CHD + ELD |
OF + S + CHD + ELD |
Diameter |
135 µm |
139 µm |
278 µm |
554 µm |
Length |
2.5 cm |
2.5 cm |
2.5 cm |
2.5 cm |
Surface |
- |
0.109 cm² |
0.218 cm² |
0.435 cm² |
Current |
- |
3 mA |
4.5 mA |
4.5 mA |
Current Density |
- |
27.5 mA/cm² |
20.6 mA/cm² |
10.3 mA/cm² |
pH |
- |
- |
5 |
5 |
Time |
- |
- |
48 h |
96 h |
Table 11.
Manufacture parameters of sample 8.
Table 11.
Manufacture parameters of sample 8.
Sample 8 |
OF |
OF + S + CHD |
OF + S + CHD + ELD |
Diameter |
135 µm |
145 µm |
330 µm |
Length |
3.5 cm |
3.5 cm |
3.5 cm |
Surface |
- |
0.15 cm² |
0.17 cm² |
Current |
- |
5 mA |
5 mA |
Current Density |
- |
30.3 mA/cm² |
13.8 mA/cm² |
pH |
- |
- |
5 |
Time |
- |
- |
48 h |
Table 12.
Manufacture parameters of sample 9.
Table 12.
Manufacture parameters of sample 9.
Sample 9 |
OF |
OF + S + CHD |
OF + S + CHD + ELD |
Diameter |
135 µm |
142 µm |
504 µm |
Length |
4 cm |
4 cm |
4 cm |
Surface |
- |
0.367 cm² |
0.633 cm² |
Current |
- |
6 mA |
6 mA |
Current Density |
- |
33.6 mA/cm² |
9.5 mA/cm² |
pH |
- |
- |
4.5 |
Time |
- |
- |
72 h |