Kita, H.; Uno, K.; Matsuda, T.; Kawanishi, H.; Kimura, M. Spike-Timing-Dependent-Plasticity Device With Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method. Preprints2024, 2024071596. https://doi.org/10.20944/preprints202407.1596.v1
APA Style
Kita, H., Uno, K., Matsuda, T., Kawanishi, H., & Kimura, M. (2024). Spike-Timing-Dependent-Plasticity Device With Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method. Preprints. https://doi.org/10.20944/preprints202407.1596.v1
Chicago/Turabian Style
Kita, H., Hidenori Kawanishi and Mutsumi Kimura. 2024 "Spike-Timing-Dependent-Plasticity Device With Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method" Preprints. https://doi.org/10.20944/preprints202407.1596.v1
Abstract
A spike-timing-dependent-plasticity (STDP) device with a Ga-Sn-O (GTO) conductance change layer deposited by a mist-CVD method has been developed. First, the memristive characteristic is analyzed. Next, based on it, spike waveforms are determined. Finally, the STDP characteristic is successfully confirmed. This is the first report on the realization of a STDP characteristic using a thin film deposited by the mist-CVD method, which is achieved by the GTO properties and a well-designed clear methodology to realize a STDP characteristic from a memristive characteristic.
Engineering, Electrical and Electronic Engineering
Copyright:
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