Version 1
: Received: 20 August 2024 / Approved: 20 August 2024 / Online: 20 August 2024 (11:59:23 CEST)
How to cite:
Poonthong, W.; Mungkung, N.; Tanitteerapan, T.; Maneepen, T.; Songruk, A.; Tunlasakun, K.; Siricharoenpanich, A.; Arunrungrusmi, S.; Kasayapanand, N. Efficiency Improvement on Indium Tin Oxide Films for Dye-sensitized Solar Cell using Oxygen Plasma by Bias-magnetron RF Sputtering Process. Preprints2024, 2024081462. https://doi.org/10.20944/preprints202408.1462.v1
Poonthong, W.; Mungkung, N.; Tanitteerapan, T.; Maneepen, T.; Songruk, A.; Tunlasakun, K.; Siricharoenpanich, A.; Arunrungrusmi, S.; Kasayapanand, N. Efficiency Improvement on Indium Tin Oxide Films for Dye-sensitized Solar Cell using Oxygen Plasma by Bias-magnetron RF Sputtering Process. Preprints 2024, 2024081462. https://doi.org/10.20944/preprints202408.1462.v1
Poonthong, W.; Mungkung, N.; Tanitteerapan, T.; Maneepen, T.; Songruk, A.; Tunlasakun, K.; Siricharoenpanich, A.; Arunrungrusmi, S.; Kasayapanand, N. Efficiency Improvement on Indium Tin Oxide Films for Dye-sensitized Solar Cell using Oxygen Plasma by Bias-magnetron RF Sputtering Process. Preprints2024, 2024081462. https://doi.org/10.20944/preprints202408.1462.v1
APA Style
Poonthong, W., Mungkung, N., Tanitteerapan, T., Maneepen, T., Songruk, A., Tunlasakun, K., Siricharoenpanich, A., Arunrungrusmi, S., & Kasayapanand, N. (2024). Efficiency Improvement on Indium Tin Oxide Films for Dye-sensitized Solar Cell using Oxygen Plasma by Bias-magnetron RF Sputtering Process. Preprints. https://doi.org/10.20944/preprints202408.1462.v1
Chicago/Turabian Style
Poonthong, W., Somchai Arunrungrusmi and Nat Kasayapanand. 2024 "Efficiency Improvement on Indium Tin Oxide Films for Dye-sensitized Solar Cell using Oxygen Plasma by Bias-magnetron RF Sputtering Process" Preprints. https://doi.org/10.20944/preprints202408.1462.v1
Abstract
DSSC devices are among the most widely studied thin-film solar cells because of their cost-effectiveness, low toxicity, and simple fabrication method. However, there is still much scope for replacing current DSSC materials due to their high cost, low volume, and lack of long-term stability. Accordingly, ITO-nanorod films were fabricated by E-beam evaporation using the glancing angle deposition method in this study. Then, the ITO-nanorod was treated by oxygen plasma via a bias-magnetron RF sputtering process to improve the efficiency of DSSC under a varying gas flow rate of 20, 40, 60, 80, and 100 sccm. The FE-SEM investigation of the ITO film structure revealed that the obtained nanorod structures have slightly different diameters. At the same time, an increase in the oxygen flow rate resulted in a rougher film surface structure. In this, the lower sheet resistance was received because of rougher morphology. When comparing the DSSC efficiency test results, we found that at a gas flow rate of 100 sccm, the highest efficiency value showed by 9.5%. On the other hand, the ITO-nanorod without plasma treatment exhibited the lowest efficiency. Hence, plasma technology can be practically applied to improve the efficiency of DSSC devices. This study will be a prototype of a highly advanced solar cell manufacturing method for the solar cell industry.
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
