Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Co-Sputtering DC for Solar Energy Applications

Juan David Cañón Bermudez; Luis Fernando Mulcué-Nieto

doi:10.20944/preprints202409.0994.v1

Preprint Article Version 1 This version is not peer-reviewed

Version 1 : Received: 12 September 2024 / Approved: 12 September 2024 / Online: 12 September 2024 (12:58:45 CEST)

The study addresses the fabrication of indium aluminum nitride (InAlN) layers by DC co-sputtering at room temperature, highlighting their potential in optoelectronic and solar cell applications. Experiments were carried out with different powers for the aluminum target, observing changes in the stoichiometry and material properties. XPS and AES analysis confirmed the variation in indium and aluminum concentration, directly affecting bandgap and electrical properties such as mobility and free carrier concentration. The layers showed smooth surfaces with low roughness, suitable for high efficiency interfaces. This method promises to reduce costs and improve the accessibility of efficient solar technologies based on InAlN semiconductor alloy.

InAlN solar cells; co-sputtering DC; room temperature; optical properties; morphological properties; low-cost synthesis; Indium Aluminum Nitride

Physical Sciences, Condensed Matter Physics

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Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Co-Sputtering DC for Solar Energy Applications

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