Wang, Y.; Yao, J.; Yang, Y.; Fan, Q.; Ni, X.; Gu, X. PCD Film Growth on GaN with Low Boundary Thermal Resistance. Preprints2024, 2024101916. https://doi.org/10.20944/preprints202410.1916.v1
APA Style
Wang, Y., Yao, J., Yang, Y., Fan, Q., Ni, X., & Gu, X. (2024). PCD Film Growth on GaN with Low Boundary Thermal Resistance. Preprints. https://doi.org/10.20944/preprints202410.1916.v1
Chicago/Turabian Style
Wang, Y., Xianfeng Ni and Xing Gu. 2024 "PCD Film Growth on GaN with Low Boundary Thermal Resistance" Preprints. https://doi.org/10.20944/preprints202410.1916.v1
Abstract
As the demand for high-frequency and high-power electronic devices has increased, gallium nitride (GaN), particularly in the context of high electron mobility transistors (HEMTs), has attracted considerable attention. However, the ‘self-heating effect' of GaN HEMTs represents a significant limitation in terms of both performance and reliability. Diamond, renowned for its exceptional thermal conductivity, represents an optimal material for the enhancement of thermal management in HEMTs. This paper puts forward a novel method for directly depositing diamond films onto N-polar GaN (NP-GaN) epitaxial layers. This eliminates the complexities of the traditional diamond growth process and the need for temporary substrate steps. Given the relative lag in N-polar material growth technologies, which are marked by surface roughness issues, and the recognition that the thermal boundary resistance (TBRGaN/diamond) represents a critical factor constraining efficient heat transfer, our study introduced a series of optimisations with the objective of enhancing the quality of the diamond nucleation layer while ensuring that the integrity of the GaN buffer layer remains intact. Moreover, chemical mechanical polishing (CMP) technology was employed to effectively reduce the surface roughness of the NP-GaN base, thereby providing a more favourable foundation for diamond growth. The optimisation trends observed in the thermal performance test results were encouraging. The integration of diamond films onto highly smooth NP-GaN epitaxial layers demonstrated a reduction in TBRGaN/Diamond compared to diamond layers deposited onto NP-GaN with higher surface roughness that had undergone no prior process treatment.
Keywords
GaN HEMT; self-heating effect; NP-GaN; GaN-on-diamond; TBR
Subject
Chemistry and Materials Science, Surfaces, Coatings and Films
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
