In the present work, the growth specificity of Cd1−xMnxTe layers by the molecular beam epitaxy and results of experimental studies of several Cd1−xMnxTe layers grown on GaAs(100) hybrid substrates with CdTe buffers are presented. Our efforts were concentrated on creating structures with high crystallographic quality, specifically aiming to reduce the number of defects. Experimental results for the selected structures demonstrated that the Cd1−xMnxTe layers, with varying x, exhibit high crystallographic and surface morphology quality. Specifically, high-resolution X-ray diffraction measurements and their analysis revealed that the intensity distribution does not reflect the effects of mosaicity or dislocation density. The aim of the work was to characterize the Mn dopant depending on the x-value. The magnetic properties were studied as a function of manganese concentration by using electron paramagnetic resonance. By applying continuous wave electron paramagnetic resonance in the wide temperature range, we observed two groups of lines: from manganese and from so-called low field magnetic absorption.