ARTICLE
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doi:10.20944/preprints201811.0047.v1
Subject:
Engineering,
Electrical And Electronic Engineering
Keywords:
gate-induced drain leakage (GIDL), drain-induced barrier lowering (DIBL), recessed channel array transistor (RCAT), on-current (Ion), off-current (Ioff), subthreshold slope (SS), threshold voltage (VTH), saddle FinFET (S-FinFET), Potential Drop Width (PDW), Shallow Trench Isolation (STI).
Online: 2 November 2018 (10:21:47 CET)