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A Novel Integrated High Precision Vacuum Microelectronic Accelerometer

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Submitted:

22 May 2017

Posted:

23 May 2017

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Abstract
In this paper, a novel integrated high precision vacuum microelectronic accelerometer is put forward based on the theory of field emission, the accelerometer consists of sensitive structure and interface ASIC. The sensitive structure has a mass of a cathode cone tips array, a folded beam, an emitter electrode and a feedback electrode. The sensor is fabricated on a double side polished (1 0 0) N-type silicon wafer, the tips array of cathode are shaped by wet etching with HNA (HNO3, HF and CH3COOH) and metalized by TiW/Au thin film. The structure of sensor is released by ICP process finally. The interface ASIC was designed and fabricated based on the P-JFET high voltage bipolar process. The accelerometer is tested through static field rollover test, and the test results show the integrated vacuum microelectronic accelerometer has good performances, which sensitivity is 3.081V/g and non-linearity is 0.84% in the measuring range of −1g~1g.
Keywords: 
Subject: 
Physical Sciences  -   Applied Physics
Copyright: This open access article is published under a Creative Commons CC BY 4.0 license, which permit the free download, distribution, and reuse, provided that the author and preprint are cited in any reuse.
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