Carrascoso, F.; Lin, D.-Y.; Frisenda, R.; Castellanos-Gomez, A. Biaxial Strain Tuning of Interlayer Excitons in Bilayer MoS2. Preprints2019, 2019080139. https://doi.org/10.20944/preprints201908.0139.v1
APA Style
Carrascoso, F., Lin, D. Y., Frisenda, R., & Castellanos-Gomez, A. (2019). Biaxial Strain Tuning of Interlayer Excitons in Bilayer MoS<sub>2</sub>. Preprints. https://doi.org/10.20944/preprints201908.0139.v1
Chicago/Turabian Style
Carrascoso, F., Riccardo Frisenda and Andres Castellanos-Gomez. 2019 "Biaxial Strain Tuning of Interlayer Excitons in Bilayer MoS<sub>2</sub>" Preprints. https://doi.org/10.20944/preprints201908.0139.v1
Abstract
We show how the excitonic features of biaxial MoS2 flakes are very sensitive to biaxial strain. We find a lower bound for the gauge factors of the A exciton and B exciton of (-41 ± 2) meV/% and (-45 ± 2) meV/% respectively, which are larger than those found for single-layer MoS2. Interestingly, the interlayer exciton feature also shifts upon biaxial strain but with a gauge factor that is systematically larger than that found for the A exciton, (-48 ± 4) meV/%. We attribute this larger gauge factor for the interlayer exciton to the strain tunable van der Waals interaction due to the Poisson effect (the interlayer distance changes upon biaxial strain).
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