Solid state sensors having timing capabilities are becoming an absolute need in particle tracking techniques of future experiments at colliders. In this sense, silicon sensors having 3D structure are becoming an interesting solution, due to their intrinsic speed and radiation resistance. A characteristics of such devices is the strict dependence of their performance on their geometric structure, which can be widely optimised by design, thus requiring suitable tools for an accurate modeling of their behaviour. This paper illustrates the development, performance and use of the TCoDe simulator, specifically dedicated to the fast simulation of carrier transportation phenomena in solid state sensors. Some examples of its effectiveness in the design and analysis of 3D sensors is also given.