Two opposed p–n diodes are connected with another junction that causes cancellation of the electric field in the depletion layer of each diode by the field of the other diode. This derived quantum diode is called the A system. Another dual diode, constructed by the same process but with the p- and n-types positioned as duality, called the B system. When a bias voltage is applied between the A and B systems, Lorentz conservation imparts a momentum (i.e., a wave number) to the carriers in the absence of any internal voltage. Thus, a superconducting bias current density appears without the need for cooling. The reappearances of electron–hole pairs on the junction surfaces are assumed to be described by entire wavefunctions normalized by the band gap. Based on the bias superconducting current, NOT and NAND gates were constructed from the quantum diode systems. Numerical calculations revealed that the constant phases of the entire wavefunctions of the p-and n-types converged. Accordingly, it was clarified that Bose–Einstein condensation and the Meissner effect (described by the London equation) occurred in the quantum diode systems. Moreover, the systems exhibited rectification characteristics and a switching speed of the order of 10^-14 s. Combining this switching property with the large bias superconducting current (of the order of several V), we developed NOT and NAND gates with direct quantum correlations among many qubits, which are unaffected by random and thermal noises. These gates have memorization and initialization properties and are compatible with existing and accumulating programing algorithms. Moreover, when harvesting a divergent current output from these systems, the bias superconducting current and memorization property preserve the formed quantum correlations.