Essay
Version 1
This version is not peer-reviewed
Corrections of the Equation for the Fermi Level of Impurity Isotropic Semiconductors
Version 1
: Received: 20 August 2021 / Approved: 23 August 2021 / Online: 23 August 2021 (12:11:03 CEST)
How to cite: Lyu, J. Corrections of the Equation for the Fermi Level of Impurity Isotropic Semiconductors. Preprints 2021, 2021080430 Lyu, J. Corrections of the Equation for the Fermi Level of Impurity Isotropic Semiconductors. Preprints 2021, 2021080430
Abstract
An equation for the Fermi level of impurity isotropic semiconductors is considered when the bottom of the conduction band and the top of the valence band are at the center of the first Brillouin zone. The energy of charge carriers in the valence and conduction bands of semiconductors is considered taking into account the real positions of the top of the valence band and the bottom of the conduction band in the first Brillouin zone. A universal equation for determining the Fermi levels of impurity isotropic semiconductors is presented.
Keywords
first Brillouin zone; valence band; conduction band; Fermi level; semiconductor
Subject
Physical Sciences, Theoretical Physics
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Comments (0)
We encourage comments and feedback from a broad range of readers. See criteria for comments and our Diversity statement.
Leave a public commentSend a private comment to the author(s)
* All users must log in before leaving a comment