3.2. EBSD analysis results during recrystallization process
Fig. 4 (a), (b) and (c) shows the EBSD-IPF images of 2A14 Al alloy on RD-TD plane annealing to 505 °C, 555 °C and 580 °C, respectively. The corresponding IPF grain orientation ruler is shown in Fig. 4 (d). With the increase of annealing temperature, the grain size grew gradually. When annealing to 505 °C and 555 °C, the color difference in a single grain was large, which indicates that there were still many defects in the grain, and LAGBs existed. When annealing to 580 °C, the color in a single grain was relatively consistent, indicating that recovery and recrystallization occurred in the process of increasing the temperature, and the defects in the grain were gradually reduced.
In order to further study the evolution of grain boundaries during recrystallization annealing, the grain boundaries diagram and grain boundaries density diagram on the RD-TD plane are drawn, as shown in
Fig. 5. Due to the limited resolution accuracy of EBSD test and the magnification of SEM, the threshold of LAGBs recognition was set to 2°, and the sub grain boundaries that less than 2° were ignored. When the annealing temperature reached 505 ℃ (Fig. 5(a)), the microstructure was densely covered with LAGBs, the peak relative density of LAGBs reached 14, and the relative density of LAGBs in most areas was higher than 12 (Fig. 5(d)). With the increase of annealing temperature to 555 ℃ (Fig. 5(b)), the grain size became larger, in other words, the HAGBs became less. Some grains with low-density grain boundaries appeared in the structure, which indicates that the recovery phenomenon of the structure occurred along with the recrystallization process. The relative density peak of grain boundary was still 14, see Fig. 5(e), while the relative density of grain boundary in most areas remained at a high level, and only low-density grain boundary areas appeared in local areas. With the increase of annealing temperature, the grain boundaries will migrate, and the migration of grain boundaries will reduce the density of grain boundary in the crystal. When annealing at 505 ℃, the migration of LAGBs was obviously blocked. With the increase of temperature to 555 ℃, the grain boundary density in some areas decreased, indicating that this hindrance was disappearing. When the annealing temperature reached 580 ℃ (Fig. 5(c)), the grains grew further, and the LAGBs in the grains were greatly reduced to disappear. The grain boundary density figure (Fig. 5(f)) shows that the peak relative density of grain boundary decreased to 1.4 at 580 ℃, which is one tenth of that in 505 ℃ and 555 ℃. At the same time, the relative grain boundary density in most areas was less than 1.
In the process of annealing, in addition to the evolution of grain boundaries, the evolution of dislocations is also an interesting phenomenon. Generally speaking, with the increase of annealing temperature, dislocations will slip and climb, different dislocations will annihilate, and the same dislocations will be directionally arranged to form dislocation walls (sub-grain boundaries). Due to the annihilation of different dislocations, the dislocation density will decrease, which is often called the metal recovery phenomenon. Unfortunately, the resolution scale of EBSD cannot reach the dislocation level, but the change trend of dislocation density can be qualitatively analyzed by theoretical calculation.
The kernel average misorientation results of 2A14 Al alloy on RD-TD plane annealing to 505 °C, 555 °C , 580 °C is shown in Fig. 6 (a), (b), (c), respectively. When the annealing temperature reached 505 °C (Fig. 6(a)), the peak value of KAM reached 15, and the KAM value in most areas was more than 10, indicating that the geometrically necessary dislocations (GNDs) density in the structure were high. With the increase of temperature to 555 °C (Fig. 6(b)), the peak value of KAM was still 15, indicating that the GNDs density of the high-density dislocation regions were not decreased. The KAM value of most areas decreased to below 10, and some areas with KAM value lower than 5 appeared. Comparing with Fig. 5(b) and (e), these low-density dislocation regions coincide with the low-density grain boundary regions. With the annealing temperature reached 580 °C (Fig. 6(c)), the peak value of KAM decreased to 10, the KAM value of most areas decreased below 3, which shows that the GNDs density in most regions decreased, and only the GNDs density near the HAGBs was higher. The annihilation of reverse dislocations will reduce the dislocation density. In order to annihilation, dislocations need to slip and climb first. When annealed to 555 ℃, the dislocations in some regions could slip and annihilate to reduce the dislocation density and formed a low-density dislocation region. The decrease of KAM value in most areas was not obvious, indicating that the slip of dislocation was hindered. It is speculated that the slip of dislocation was hindered due to the existence of dispersed precipitation phase, which needs to be further confirmed by energy dispersive spectrum (EDS) test.
Apart from the evolution of dislocations, the recrystallization can also be characterized more intuitively by EBSD results. For each individual grain separated by the HAGBs, the average orientation of the grain can be obtained by calculating the orientation of each pixel in the grain. The orientation of each pixel has a deviation from the average orientation of the grain. The grain orientation spread (GOS) value can be obtained by averaging the deviation of all pixels in the grain from the average orientation. Generally speaking, grains with GOS value below 1.8° were regarded as recrystallized grain structure, grains with GOS value between 1.8 and 3 were regarded as sub-grain structure, and grains with GOS value over 3 were regarded as deformed grain structure. The GOS figures of 2A14 Al alloy on RD-TD plane annealing to 505 ℃, 555 ℃ , 580 ℃ is shown in
Fig. 6 (d), (e), (f), respectively. When annealed to 505 ℃ (Fig. 6(d)), the peak value of GOS reached 38, the GOS value of most grain regions exceeded 10, and the GOS value of almost all grains was higher than 3, indicating that it was a deformed structure at this time. When annealed to 555 ℃ (Fig. 6(e)), the peak value of GOS decreased to 23, the GOS value of most grain regions decreased to 8, and the GOS value of some grain regions were lower than 3, indicating that some substructures appeared. When annealed to 580 ℃ (Fig. 6(f)), the peak value of GOS decreased to 7, the GOS value of most grain regions were lower than 3, the GOS value of half the grain regions were lower than 1.8, indicating that the recrystallization has been basically completed, and there were a few substructures and deformed structures.
In addition, there was a phenomenon of texture in the hot rolling structure. The micro-texture of the corresponding region can be characterized by analyzing the EBSD results.
Fig. 7(a)-(d) shows the pole figure of 2A14 alloy at hot-rolled stage, and annealing to 505 ℃, 555 ℃, and 580 ℃, respectively. The pole figures shows the distribution of texture in {100}, {110} and {111}. There was obvious texture phenomenon in the hot rolling structure (Fig. 7(a)), and the intensity of texture was the highest at {100}, and the peak intensity of texture reached 9.36. With the increase of annealing temperature, the peak intensity of texture decreased. The peak intensity of texture was decreased to 5.56, 3.56, and 3.01 when annealed to 505 ℃, 555 ℃, and 580 ℃, respectively. At the same time, with the increase of annealing temperature, the preferred orientation gradually changed to random orientation.
In order to calibrate the type of texture, the corresponding orientation distribution function (ODF) maps was drawn. The ODF maps were displayed with φ
2 is constant value at an interval of 5°. The ODF maps of hot-rolled, annealed to 505 ℃, 555 ℃, and 580 ℃ is shown in
Fig. 8 (a)-(d), respectively. The intensity of texture was highest at the hot-rolled state, which reached 13.208. With the increase of annealing temperature, the intensity of texture gradually decreased. The intensity of texture decreased to 5.539, 4.549, and 4.437 when annealed to 505 ℃, 555 ℃, and 580 ℃, respectively.
Table 2 shows some of the common texture types that appear in this study [
20,
21]. According to the way of formation, texture can be divided into deformation texture and recrystallization texture [
22,
23,
24]. A mixed texture was appeared at the hot-rolled state Fig. 8((a)). Texture with the highest intensity was the recrystallized P texture with {011} <122>. Second high intensity texture was the recrystallized brass texture with {236} <385>. And three deformation texture in order of intensity were copper texture with {112} <111>, brass texture with {011} <211>, S texture with {123} <634>, respectively. With the increase of annealing temperature, these textures appeared in the subsequent annealing process, but the intensity of texture changed. The peak intensity of ODF maps was gradually decreasing, indicating that the texture intensity was decreasing with the increase of annealing temperature, whether deformation texture or recrystallization texture. In addition, with the increase of annealing temperature, the texture type changes from the mixed texture type of deformation texture and recrystallization texture to the mixed texture type dominated by recrystallization texture. These also show that in the process of recrystallization, the microstructure gradually changed from preferred orientation to random orientation, but the recrystallization texture was inherited in the process of transformation, and the strength gradually decreased.
In addition, the analysis of misorientation axis can also explain the change of texture during recrystallization annealing.
Fig. 9 shows the misorientation axis figure and the corresponding distribution of misorientation axis figure annealed to 505 ℃, 555 ℃, and 580 ℃, respectively. With the increase of temperature, the density of misorientation axis decreased gradually. The highest intensity of misorientation axis was [001] annealed to 505 ℃. When the annealing temperature rose to 555 ℃, the highest intensity of misorientation axis turned to [
11], the misorientation axis in [001] still existed, but the intensity decreased greatly. When the annealing temperature rose to 580 ℃, the misorientation axis in [001] disappeared. In general, the density of the misorientation axis decreased, which was consistent with the previous results, indicating that the microstructure changed from preferred orientation to random orientation during recrystallization annealing, but the recrystallization texture was retained and the deformation texture tended to disappear.
3.3. Second-phase particles in 2A14 alloy
The results of EBSD show that recovery and recrystallization occur during recrystallization annealing. At 555 ℃, the LAGBs in some grains can migrate, while the LAGBs in most grains have no obvious migration. It is inferred that the migration of LAGBs is hindered by the second phase particles, so it is necessary to detect the phase and element distribution in the 2A14 Al alloy.
Fig. 10 shows the X-ray diffraction (XRD) patterns of the 2A14 Al alloy at hot-rolled stated and annealed to 505, 555, 580 ℃, respectively. The diffraction peaks of the four patterns occurred at 2θ of 38.47°, 44.74°, 65.13°, 78.23°, 82.46°, which corresponded to the diffraction of (111), (200), (220), (311), and (222) planes of the Al matrix phase, respectively. And the weaker diffraction peaks of the four patterns occurred at 2θ of 20.62°, 37.87°, 45.59°, 47.33°, 47.81°, which corresponded to the diffraction of (110), (211), (112), (310), (202) planes of the θ-Al2Cu phase, respectively. It is difficult to observed phases other than Al matrix and θ phase in the XRD patterns, but this does not mean that there were only two phases in the alloy. Because the absolute proportion of other phases was too low to observe by XRD. The characterization of other phases will be given in the later SEM and TEM results. The diffraction peak intensity of θ phase was the same at hot-rolled stated and annealed to 505 ℃, but decreased when annealed to 555 ℃, and nearly disappeared when annealed to 580 ℃, which indicates that θ phase was dissolved in the Al matrix, that is, solid solution phenomenon occurred at 555 ℃. This is consistent with the DSC results that there was the dissolution endothermic peak of θ phase at 520 ℃ (Fig. 1). In addition, the relative intensity of diffraction peaks on different crystal planes of Al matrix also evolve during annealing. For example, the diffraction peak of Al matrix at 2θ of 38.47° corresponding the (111) plane of Al matrix first increased and then decreased with the increase of annealing temperature. The diffraction peak of Al matrix at 2θ of 82.46° corresponding the (222) plane of Al matrix almost disappeared when annealed to 580 ℃. The results show that the micro-texture evolved during annealing process, and the crystal plane evolved from preferred orientation to random orientation, which is consistent with the results of PF (Fig. 7) and ODF (Fig. 8) diagram in EBSD.
Fig. 11 shows the distribution of elements in the 2A14 Al alloy at different scales. Fig. 11 (a) shows the high-angle annular dark-field (HAADF) scanning transmission at higher magnification of 2A14 Al alloy annealed to 555 ℃. In the figure, precipitates are dispersed in the sub-grains. Fig. 11(b) is the corresponding scanning map distribution diagram of the elements. It can be seen from Fig. 11(b) that the second phase particles are dispersed in the sub-grains. Among them, the larger dispersed precipitate phase was Fe-Mn dispersed phase, and the smaller dispersed phase was Si phase, Mg-Zn phase and G-P zone formed by very small-scale enrichment of Cu element. The size of these dispersed precipitates was small enough to hinder the migration of sub-grain boundaries, LAGBs and dislocation slip during recrystallization annealing, which was usually called the pinning effect of second phase particles. Fig. 11(c) shows the backscattered electron (BSE) map of SEM image at lower magnification. The contrast of BSE can well reflect the difference of atomic number of elements. Scanning at a small magnification shows that coarse second phases were distributed along the HAGBs. According to the corresponding element scanning distribution diagram, the coarse second phases were mainly Cu rich phase, Fe-Mn phase and Si rich phase.