1. Introduction
Heusler alloys, discovered at the beginning of 20-th century, are a diverse family of binary, ternary, and quaternary compounds with a wide range of physical characteristics suitable for various applications, including spintronics, magnetic refrigeration, actuators among others. [
1,
2]. They pique the curiosity of fundamental and applied researchers due to their considerable tunability depending on chemical composition, crystal structure, or electrical structure [
3]. Spin polarization, superconductivity, shape memory, and magnetocaloric effect, in particular, have attracted considerable interest from both an experimental and theoretical point of view [1-3]. Heusler alloys, also known as full-Heusler alloys with the stoichiometry X
2YZ, may be classified into many classes based on their chemical composition and consequent characteristics [
4]. Heusler based on Co
2YZ is a prominent category of materials with high spin polarization (P) or even half metallicity (P 100%). However, theoretical and experimental investigations show that spin polarization is very sensitive to structural instability. The L2
1 crystalline phase has the greatest structural ordering, which is necessary to achieve the requisite spin polarization levels. While the mutual exchange of atoms on the Y-Z position (B2 disorder) has little effect on spin polarization values, the X-Y or X-Y-Z disorders (D03 or A2, respectively) can dramatically reduce spin polarization [
5]. Moreover, Heusler alloys described above, have complex crystalline structures that need extremely high temperatures (usually > 1000 K in the bulk form and > 650 K in the thin-film form) for their crystalline ordering [
5]. As a result, one major issue when producing X
2YZ full-Heusler thin films is to achieve the chemically-ordered L2
1 phase as the excellent features of Co
2-based Heusler compounds (Co
2MnGe) are most typically expected for this L2
1 phase (see
Figure 1a). Co
2-based Heusler alloys, on the other hand, can crystallize in a variety of phases with reduced chemical ordering without affecting the atomic sites in the lattice [
7]. The most common disordered phase is B2, in which Y and Z atoms are randomly distributed, resulting in a primitive unit cell rather than the FCC cell (Fm-3m → Pm-3m) (see
Figure 1b). At this time, it is unknown how much the chemical disproportion affects the physical features. It’s worth noting that,
ab initio calculations [
8] and experiments ones [
9] show that the physical properties (Curie temperature, cell parameter, magnetic moment, magnetic damping constant, and spin polarization at EF) of the L2
1 and B2 phases are slightly distinguishable from one another, and the half-metallic spin gap should be conserved.
In the current work, we present an attempt to obtain Co
2MnGe glass-coated microwires. The fabrication method choice is due to the interesting magneto-structural behavior of glass-coated microwires from Heusler alloys as well as functional properties of glass-coated microwires, such as superior mechanical properties, insulating, thin and flexible glass-coating and thin dimensionality [10-19]. Accordingly, we manufactured Co
2MnGe glass-coated microwires using the Taylor-Ulitovsky process described in details elsewhere [
12,
13]. The Taylor-Ulitovsky technique, known since the 1960s [
20], is one of the fabrications recently used to produce Heusler alloys glass-coated microwires [10-12, 14-19]. The fundamental advantage of this low-cost technology is that it enables the manufacturing of thin and long (a few kilometers long) microwires with an extended diameters range (d- values from 0.1 to 100 µm) at high speeds (up to a few hundred meters per minute) [20-22]. Glass-coated microwires with outstanding mechanical characteristics are also produced using this technology [13,23-25]. The glass coating on the microwires can provide us additional benefits, such as increased insulation and environmental protection. Furthermore, the availability of a biocompatible thin, flexible, insulating, and highly transparent glass covering might help biological applications [
26,
27]. As a result, Heusler microwires based on Co
2MnGe are a potentially smart material for a wide variety of devices applications. To our best knowledge, no one has reported on preparation, and structurally, mechanically, or magnetically characterization of Co
2MnGe-based glass-covered Heusler microwires.
2. Materials and Methods
For the production of Co
2MnGe glass-coated microwires, the first step is the manufacturing of the Co
2MnGe alloy ingot by arc melting under argon atmosphere. The melting process starts by melting the nominal elements with high purity (Co (99.99%), Mn (99.9%) and Ge (99.9%)). The argon atmosphere is proceeded, in order to avoid the oxidation during melting. To attain an alloy with higher homogeneity the melting route was repeated five times. Then, the nominal composition was verified by performing Energy Dispersive X-ray (EDX) analysis, finding the real composition to be Co
55Mn
22Ge
23. Afterwards, when we acquire the alloy, we prepare the Co
2MnGe glass-coated microwires through the Taylor-Ulitovsky technique [
12,
17,
20]. This fabrication procedure consists of drawing and forming directly from the melted master alloy, then additional chemical composition has been performed as illustrated at
Table 1. The obtained diameter of inner metallic nucleus of microwire sample is around 18 µm, while the total diameter (with an external Pyrex coating) is around 27.1 µm. The microstructure and phase composition analysis for the produced samples have been examined with a BRUKER X-ray diffractometer (D8 Advance, Bruker AXS GmbH, Karlsruhe, Germany), performed with Cu Kα (λ = 1.54 Å) radiation. Furthermore, the magnetic behavior was scrutinized through the magnetization curves, which were measured using a PPMS (Physical Property Magnetic System, Quantum Design Inc., San Diego, CA) vibrating-sample magnetometer at temperatures, T, between 5 and 400 K. A magnetic field, H, from 50 Oe to 20 kOe was applied along the sample axis and perpendicular to the wire axis. The results are provided in terms of the normalized magnetization, M/M
5K, where M
5K is the magnetic moment obtained at 5 K.
3. Results
To check the chemical composition of Co
2MnGe glass-coated microwires we performed EDX/SEM analysis and the output results listed in
Table 1 The composition of the metallic nucleus was found to be somewhat different from the stoichiometric one using the EDX data from
Table 1 (Co
2MnGe). This little variance was due to the peculiarities of the preparation procedure, which included alloy melting and casting. We examined the nominal composition for 10 locations to determine the amount of difference. The actual 2:1:1 ratio for Co, Mn and Ge was verified for all locations, with an atomic average Co
56Mn
19Ge
25.
X-ray diffraction (XRD) patterns of Co
2MnGe alloys in glass coated microwires are investigated at room temperature and shown in
Figure 2. As shown in Fig.2, at low angles, the XRD diffractogram, at 2θ ≈ 22º a huge halo is observed, which must be ascribed to the amorphous glass coating presence. The same behaviour was reported and discussed elsewhere, [10-19]. The Co
2MnGe full Heusler alloy has to be indexed in the Fm-3m space group with an L2
1 cubic structure. Indeed, the cubic structure of Co
2MnGe is confirmed from the XRD profile. From the XRD pattern analysis, it is well perceived the presence of a cubic structure. Nevertheless, a second phase can be detected (see
Figure 2b). This hypothesis is drawn from the fact that the main peak (220) results from an overlapping of two very close peaks; one peak at around 2θ ≈ 44º, recognized to the L2
1 structure and the other one at about 2θ ≈ 45º, which may be due to the B2 type disordered structure.
Therefore, the crystalline structure of prepared Co
2MnGe glass-coated microwires is an FCC-L2
1 with a minor BCC-B2 cubic structure in some parts of the synthesized sample. Although the L2
1 structure is an extremely ordered and crucial structure to achieve the required spin polarization values, but it should be mentioned that the manufacturing process of the microwires may results a different structural disorder (B2, A2, DO3, etc.) as described in the introduction. For instance, the mutual disorder between Y (Mn) and Z (Ge) atomic positions outlines the B2 disorder type (see
Figure 1). It is well noting that, the theoretical calculations anticipated that the B2 type disorder structure produced in Y-Z elements has a far smaller impact on the spin polarization values than the X-Y disorder and X-Y-Z disorder, both of which noticeably diminish this feature [
5]. The presence of (111) and (200) and (311) super lattice diffraction peaks confirm the presence of high ordered of L2
1 structure [
28]. The estimated lattice parameter and calculated volume of the cell are a = 5.7430 Å and V = 189.42 Å
3, respectively, which perfectly matched with the lattice parameter and Volume values reported elsewhere [9, 29] for Co
2MnGe thin films. Such of high ordered L2
1 structure is for the first time detected in Co
2MnGe-based glass-coated microwires.
For deeper investigation of the microstructure of Co
2MnGe we used the Debye- Scherrer’s equation, described in our previous works [
16]. Using this protocol, we can estimate the average grain size, D
g, related to each peak, being for as-prepared Co
2MnGe microwires of about 63.3 nm.
The ferromagnetic ordering of as-prepared Co
2MnGe glass-coated microwires is evidenced from
Figure 3, where the magnetic hysteresis (M-H) loops measured at 5K ≤T ≤305 K are provided. The M-H loops have been measured at applied high magnetic field, H, up to ±40 kOe to make sure that Co
2MnGe glass-coated microwires sample present magnetic saturation. In addition, M-H loops were measured at different temperature to illustrate their behavior with temperature. Due to the high ordered L2
1 structure perfect ferromagnetic behavior is observed where the normalized saturation magnetization has a monotonic increase by decreasing the temperature i.e., the lowest value of M/M
5K ratio detected at 305 K and the highest value is observed at 5K. Thus, the high degree of L2
1 ordered phase of as-prepared as well as the average grain size, D
g, of Co
2MnGe glass-coated microwires are relevant factors, that can affect M-H behavior with temperature. Thus, such character of M-H loops by varying the temperature was not observed in our previous investigation for Co
2Mn-based glass-coating microwires due to the low degree of L2
1 ordered phase (see [
12,
17]).
From low field hysteresis loops (see inset of Figure3) the coercivity, H
c, of about 120 Oe for whole T range can be appreciated. Such H
c –values are about one order of magnitude higher than that reported for other Co
2Mn –based microwires [
12,
17]. This difference in H
c –values can be related to higher average D
g –values observed in as-prepared Co
2MnGe glass-coated microwires.
The thermomagnetic properties i.e., (M/M
5K) vs. T and magnetic field of Co
2MnGe glass-coated microwires are shown in
Figure 4 and
Figure 5. In this part, we only focused on the magnetization behavior at a wide range of temperature and magnetic field to evaluate the possible magnetic phase transition. We measured temperature dependencies of the magnetization in the temperature, T, range from 5 to 400 K. To avoid the over estimation of the magnetization we used the normalize magnetization parameters (M/M
5K), where the M
5K is the highest magnetic moment detected at 5K. A notable ferromagnetic behavior has observed for all range of measuring temperature and applied magnetic field, which is expected due to the high Curie temperature for Co
2MnGe alloy above 883 K [
9,
29]. For field cooling (FC) and field heating (FH) magnetization curves a notable mismatching between FC and FH curves have observed when (M/M
5K vs T) dependence measured at low magnetic field i.e., 50 Oe and 200 Oe as seen in
Figure 4. For the M/M
5K (T) curves measured at 50 Oe the FC curve overlap FH curves for temperature range 400 K to 200 K, then reversed for temperature range 200 K to 30 K and finally full matching is observed for T below 30 K. This behavior can be discussed with two flipped points where the FC and FH magnetization curves changed. By increasing the external applied magnetic field i.e., 200 Oe, these flipping points are disappeared and uniform magnetic tendency is detected, where FH overlaps FC for the temperature range 400 K to 20 K, while perfectly matching below 20 K, as indicated in
Figure 4b.
For further increase of the applied magnetic field, both of FC and FH magnetization curves are perfectly matched and homogenous ferromagnetic behavior is seen (see
Figure 5). The interesting magnetic field dependence of FC and FH curves indicates the sensitivity of Co
2MnGe to the magnetic field and temperature.
Author Contributions
Conceptualization, M.S. and A.Z.; methodology, V.Z. M.I.; validation, M.S., V.Z. and A.Z.; formal analysis, M.S and A.W.; investigation, M.S., A.W, and A.Z.; resources, V.Z. and A.Z.; data curation M.S, M.I. and A.W; writing—original draft preparation, M.S., A.W. and A.Z.; writing—review and editing, M.S. and A.Z.; visualization, M.S., A.W., and V.Z supervision, A.Z.; project administration, V.Z. and A.Z.; funding acquisition, V.Z., and A.Z. All authors have read and agreed to the published version of the manuscript.