2. Materials and Methods
The citrate-gel technique was used for synthesis of nanogranular SFMO ceramics using ultra-high purity Sr(NO
3)
2, Fe(NO
3)
3•9H
2O, (NH
4)
6Mo
7O
24 and citric acid monohydrate C
6H
8O
7H2O as initial reagents. To obtain a colloidal sol, aqueous solutions of Sr(NO
3)
2 and Fe(NO
3)
3•9H
2O were mixed in a molar ratio of Sr/Fe = 2:1. Citric acid was added to the solution in a molar ratio of citric acid/Fe = 6.5:1. After that, an aqueous solution of (NH
4)
6Mo
7O
24 was added to the solution of strontium and iron nitrates in a molar ratio Mo/Fe = 1:1. Then, ethylenediamine was added upon constant stirring by means of an IKA C-MAG HS7 magnetic stirrer, until the pH of the solution reached 4. Thereafter, the substance was dried at a temperature of 80 °C. The resulting precipitate was placed in a furnace at a temperature of 100 °C, followed by heating at a rate of 0.4 °C min
-1 up to 200 °C, a dwell time of 18 h, and a cooling-down with the time constant of the furnace. The resulting solid foam which was crushed and then subjected to heat treatment at 500 °C in an oxygen atmosphere under the pressure
p(O
2) = 0.21•10
5 Pa for 10 h. The final SFMO synthesis was carried out in a reducing ambient of a 5%H
2/Ar gas mixture at 900 °C for 4 h in several stages. Single-phase SFMO powders were pressed into tablets with a diameter of 10 mm and a thickness of 3 mm under a pressure of 4 GPa at 530 °C for 1 min. Dielectric SMO shells were formed in these samples on the surface of the SFMO grains by annealing at 530 °C in an Ar flow with a rate of 11 sccm for 5 h. Details of sample fabrication were already described elsewhere [
7,
11,
12].
In the dielectric regime, electrical conduction of granular materials results from transport of electrons and holes by tunneling from one isolated metallic grain to the next. A charge carrier in a granular material contributes to electrical conductivity when an electron is removed from a neutral grain and placed on a neighboring neutral grain. Such a process requires charging energy
Ec per grain of [
13]:
where
e is the electronic charge,
d the granular or grain size,
w the separation between the grains (e.g. the tunneling barrier width), and
F(
w,
d) a function whose form depends on shape and arrangement of the grains. Assuming the grain size
d to be much larger than the barrier width
w,
Ec is approximately given by [
14]:
with
ε and
ε0 the dielectric and vacuum permittivities, respectively. Since the charging energy is reciprocal to the grain diameter, charging effects become significant at small grain sizes. In the case of nanogranular SFMO/SMO core-shell ceramics fabricated by the citrate-gel method with
d = 75 nm and
w = 1.24 nm [
7], and assuming
εSrMoO3 ≈ 10 [
15],
Ec amounts to a value of
Ec ≈ 1.6 meV. This should be compared with a value of
Ec ≈ 1 meV obtained after saturation of the insulating SMO phase at grain boundaries in mechanically ball-milled polycrystalline SFMO pellets [
16]. Such ball-milled powders possess a grain size of about 100 nm after 6 h of grinding [
17], i.e. approximately the same grain size as the considered nanogranular SFMO/SMO core-shell ceramics.
A
lnσ versus
T-1/2 plot with σ the electrical conductivity, yields the constant [
14,
18]
where in our case
wχ is a value in the order of about 2 [
19,
20]. Using the
lnσ versus
T-1/2 plot, we find
C ≈ 4.7 meV for zero magnetic field conductivities of nanosgranular SFMO/SMO core-shell ceramics fabricated by the citrate-gel method in the temperature range of 10-50 K [
11].
C values of Co-Al-O insulating granular films were 9.48 meV for Co
36Al
22O
42, 2.15 meV for Co
46Al
19O
35, 1.55 meV for Co
52Al
20O
28, and 0.78 meV for Co
54Al
21O
25 [
19]. In other insulating granular metal films, the
lnσ versus
T-1/2 plot results in much higher
C values decreasing with increasing metal fraction from 1.1 eV (0.08%) to 0.13 eV (0.44%) in Ni-SiO
2 composites, from 1.1 eV (0.04%) to 0.20 eV (0.18%) in Pt-SiO
2 composites, and from 120 meV (0.18%) to 4 meV (0.38%) in Au-Al
3O
4 composites [
14].
In the next step, we consider a metal network in which the metal grains are interconnected by insulating barriers. The positive-negative pairs of charged grains induced by electron tunneling through the barriers are assumed to be roughly of the same size. In this case, each grain contributes about half of the charging energy
Ec resulting in density of charge carriers proportional to exp(-
Ec/2
kT). Thus, the resistivity caused by tunneling is given by [
14,
18]:
where
f is a barrier shape factor with
f = 2 for rectangular barriers and
f =
π/2 for parabolic barriers,
χ is the reciprocal localization length of the wave function:
with
m* is the effective electron mass,
V0 the barrier height,
ħ is the reduced Planck constant,
w the barrier width,
k the Boltzmann constant,
T the absolute temperature and
ρ0 the bulk resistivity. Note that we are considering sufficiently thin barriers in the order of 1-3 nm where direct tunneling occurs which is not disturbed by localized states in the thin barrier film [
21].
Considering a constant parameter
C [
14,
18] and assuming a rectangular barrier (
f = 2) the argument of the exponent in Equation (4) becomes
which possesses a minimum at [
14]:
Then the corresponding resistivity minimum between two nearest neighbor grains which are equal or nearly equal in size yields [
14]:
The value ρmin(T) governs the temperature dependence of the network resistivity ρ(T) since tunneling occurs via paths which makes the exponential factor of resistivity lowest.
The spin-dependent tunneling through a barrier between two ferromagnetic grains is a function of the angle
θ between the grain magnetizations. Neglecting the correlations between magnetic moments of neighboring grains, the average 〈cos
θ〉 over all pairs of grains for angles between 0 and
π represents the square of the relative magnetization
m2 = (
M/
Ms)
2, i.e. the ratio of magnetization
M to the saturation one
Ms. Finally, we arrive at an intergrain resistivity amounting to [
22]:
with
P the spin polarization. Similarly, the intergrain tunnel magnetoresistance of a network of tunnel junctions whose electrodes are double-perovskite grains with an insulating oxide layer in between is given by [
23]:
where
ρ(
B) is the resistivity for a given magnetic flux density
B,
m(
B,
T) the relative magnetization for given values of magnetic flux
B and temperature
T.
In granular systems with a broad distribution in granule size, it is highly probable that large granules are well separated from each other due to their low density. This is given by the fact that granules are more separated the larger the granule size is. As a result, a number of smaller granules exist separating the large ones. Here, the ordinary tunnelling of an electron from a large granule to a small one increases the charging energy
Ec, Equation (2), and suppresses tunnelling by the Coulomb blockade at low temperatures. In this case, higher-order tunnelling comes into play, i.e., the dominant contribution to the tunnelling current now comes from higher-order processes of spin-dependent tunnelling where the carrier is transferred from a charged large granule to the neighbouring neutral large granule through an array of small granules, using co-tunnelling of (
n+1) electrons. The TMR is then given by [
19]:
with
with
χ∗ =
pχ where
p is a constant defined in [
19], and
n* is a fitting parameter of the higher-order tunneling processes. Note that we have rewritten equation (11) according to the definition of the magnetoresistance in this work given in equation (10). In a granular Co-Al-O system,
n*(
T→0) takes a value of 1.6, so that one or two small granules intervene between larger ones in the higher-order processes. Higher-order tunneling increases the TMR at low temperatures. On the other hand, higher-order tunneling is negligible at room temperature since here
n* tends to zero [
10].
For
m2P2 << 1 equation (10) simplifies to:
Both the temperature dependence and the field dependence of the relative magnetization
m of FM SFMO were calculated following [
24]. For the temperature dependence this yields:
Using
m(
T) values from [
23,
25], we obtained
a1 = 1.89,
a2 = -1.97,
a3 = 2.2 and
a4 = -1.14 for the coefficients of Equation (14) [
24].
At sufficiently high magnetic fluxes when magnetic interactions may be still neglected, the magnetic flux density dependence of
m may be modeled by means of a traditional analysis of the approach of magnetization to saturation [
26,
27]. As a result, the magnetic flux dependence of the relative magnetization is given by:
with
i = 1,2,3, 4 for point, line, and plane forces as well as uniform forces throughout an extended volume forces, respectively.
The
κB term is often referred to as the so-called paramagnetism-like term [
28]. It represents the high field magnetization resulting from an increase in spontaneous magnetization by the application of a field [
29]. This term is usually small at temperatures well below the Curie point and may often be neglected [
30] (p.325).
Point defects in ceramics and granular materials are concentrated at grain boundaries representing only a small part of the total sample volume. Consequently, the
b1/2/
B1/2 term will be small or even negligible at higher magnetic fluxes. The value of
b1/2 = 0.00085 T
1/2 derived based on data in [
31,
32], will play a role only at small magnetic fluxes
B < 85 mT.
The
b1/
B term in equation (15) is referred to as the magnetic hardness [
28]. It has been observed to be constant at high magnetic fluxes [
33] and was attributed to internal stresses produced by dislocations [
26], especially by pairs of dislocations of opposite sign separated by a short distance smaller than the magnetic decay distance [
34]. Another theory originates
b1 from the leakage field in ferromagnetic materials [
35]. In general, this constant is attributed to inclusions or microstress [
30] (p.325). For example, it represents the demagnetizing effects of inhomogeneities such as grain boundaries, dislocations and nonmagnetic inclusions [
33].
The
b2/
B2 term in equation (15) is attributed to crystal anisotropy. Furthermore, it was shown that dislocation pairs of different sign separated by a long distance and surplus dislocations of one sign contribute to this term [
34]. The
b2/B2 term is dominant for extremely high magnetic fluxes, while the
b1/
B term is dominant at intermediate magnetic fluxes [
36]. Thus, the
b1/
B term is effective only in a limited field range. If one only considers the term
b1/
B, for nanogranular SFMO/SMO core-shell ceramics made by means of the citrate gel method [
37], the
m(
B) characteristics is well approximated by
b1 = 0.05 T below 0.1 T,
b1 = 0.085 T in the region 0.3-1 T and
b1 = 0.02 T in the region 1.5 -4 T. On the other hand, the
m(
B) curve of a similar sample measured in a different setup [
38] in this approach yields
b1 ≈ 0.3 T for magnetic fluxes in the range 2-10 T. The values given by the authors of [
38] are
b1 = 0.968 T and
b2 = 0.00292 T
2.
Neglecting the influence of internal strain, a theoretical value of the coefficient of the
b2/
B2 term, which is attributed to magnetocrystalline anisotropy (MA) is given by [
39]:
with
K1 the uniaxial anisotropy constant, and
n the volumetric density of the formula units (f.u.), that is the inverse of the formula unit volume. Here, the numerical coefficient 8/105 applies to cubic anisotropy of randomly oriented polycrystalline samples.
Table 1 compiles the values of
b2MA calculated using Equation (16) for a saturated magnetization of
Ms = 4 µ
B f.u.
-1 and
n = 8.086×10
27 f.u. m
-3 using different values of the uniaxial anisotropy constant
K1. Note that a wide range of values
K1 lead to a large uncertainly of the coefficient
b2MA.
The contribution of internal strain (IS) to
b2 is given by [
42]:
where
λs is the coefficient of magnetostriction and
σi the internal strain. Taking
λs = 10
-4 [
30] (chapter 8), [
43] and 〈
σi〉 = 150 MPa-600 MPa [
44], we arrive at
b2IS = 0.0015-0.0240 T
2.
The coefficient
b3/
B3 of Equation (15) which is determined also by magnetocrystalline anisotropy may be written for cubic anisotropy of randomly oriented polycrystalline samples as [
45,
46]:
However, this term is negligible compared to the b2/B2 term at magnetic fluxes B > K1/Msn (0.1…0.5 T in our case). Since the coefficients bi are sensitive to point defects (vacancies, antisite positions, impurity ions), line defects (dislocations) and area defects (stacking faults, grain, twin and antiphase boundaries), they are highly dependent on the synthesis conditions of the SFMO ceramics.
For comparison, we consider Fe and Co applying a phenomenological model of the temperature dependence of the relative magnetization given by [
47],
The corresponding fitting parameters
p and
β are compiled in
Table 2.
In sufficiently small granules, i.e. below a critical size of [
10]:
the magnetization can randomly flip direction under the influence of temperature. This applies to Fe, Co and SFMO with sizes of ca. 1 nm and 1.7 nm at 4 K as well as sizes of 5-6 nm and 12 nm at 300 K, respectively, In the absence of an external magnetic field, when the time used to measure the magnetization of the nanosized granules is much longer than the typical time between two flips (called Néel relaxation time), the granule magnetization appears to be in average zero. The magnetic behavior resembles a paramagnetic exhibiting an unusual high magnetic susceptibility attributed to a large number of formula units oriented in the same direction within a single magnetic domain. Such a magnetic behavior is known as superparamagnetism. Granular networks of noninteracting superparamagnetic (SPM) granules were modeled already in [
10]. The reduced magnetization of SPM granules is determined by the Langevin function
L [
48]:
where
µ is the total magnetic moment of the granule depending on its size and
ζ =
µ/
kT.
Tunneling spin polarization and the interface magnetization follow the same temperature dependence [
49,
50]. As a result, based on the theory of spin waves [
51], the spin polarization resembles the spontaneous magnetization behavior at low temperatures known as Bloch´s
T3/2 law of variation of saturation moment with temperature near the absolute zero:
Here,
P0 is the spin polarization of ordered SFMO at zero temperature and
g is a fitting parameter which in the case of magnetization is generally larger for the surface than for the bulk [
49]. It is very sensitive to surface contaminants [
52]. For the sake of simplicity, the Bloch´s
T3/2 coefficients
g were estimated by means of the Curie temperature
TC:
They are in satisfactory accordance with previous experimental data of 0.1–0.6×10
-5 for Co/Al
2O
3 [
53], 1.9×10
-4 for La
2/3Sr
1/3MnO
3/SrTiO
3, 5.1x10
-5 for La
2/3Sr
1/3MnO
3/LaAlO
3, 1.58x10
-4 for La
2/3Sr
1/3MnO
3/TiO
2 [
54], and 1.31x10
-4 derived from the intergranular TMR in Ba
0.8Sr
0.2FeMoO
6 [
23].
Now, we take into account that the spin polarization has a similar dependence on the antisite disorder (ASD), that is the fraction of B-site ions, Fe or Mo, on wrong sublattice sites which varies from 0 (corresponding to a complete order) up to 0.5 (describing a completely random Fe-Mo site occupancy) as the magnetization [
55]. As a result, the spin polarization
P was calculated following [
56] by:
With regard to Equation (10), the magnetic field sensitivity of granular FM materials amounts to:
with
For SPM granules the magnetic field sensitivity yields [10}:
Temperature affects the measuring accuracy of any sensor. Thus, there always remains a small temperature inaccuracy in the considered temperature range despite a number of compensation measures. This inaccuracy is often expressed as temperature coefficient
TC. It expresses the relation between a change in the sensing physical property and the change in temperature that causes it. Consequently, it represents the relative change of the sensing physical property with a given change in temperature. Correspondingly, the TC of the TMR is given by:
The particular case of Equation (13) yields a temperature coefficient of the
TMR amounting to:
In the calculations of this work, numerical derivatives of experimental data were evaluated by approximation of experimental curves by quartic polynomials.