3.2. Surface Morphologies after Etching with Different Etchants
Surface morphologies of the different CuCrSn alloy specimens etched for 3 min in the aqua regia etchant are shown in
Figure 2. For the 80% cold-rolled specimen, high density etching grooves can be observed on the etched surface, as exhibited in
Figure 2a, because dislocation groups and GBs are formed during the cold-rolling, and the Cu atoms close to these locations are preferentially dissolved. The deep etch grooves will increase the adhesion strength between the molding compound and the etched lead frame. After annealed at 600 °C and 700 °C, the dislocations and the original parallel GBs disappear, and high density new GBs are formed, as shown in
Figure 2b,c. Although dissolution of Cu atoms close to the GBs is faster and thus the GBs are etched preferentially, the difference in etching rates between different grains is not very serious, and the etched surface remains relatively flat for the grains are fine. The etched surface morphologies of specimens annealed at higher temperature are shown in
Figure 2d–f, in which the grains become larger, and the difference in the etching rates of grains with different orientation gradually emerges. As a result, some protruded grains are formed, because the etching rates of these grains are lower, and some steps are formed at the GBs. Meanwhile, as the density of the GBs decreases, the effect of GBs on the etching becomes less serious. In addition, it has been found by the authors that that the microscopic etched surface morphologies of different grains are very different and basically dominated by the orientation of these grains, and the mechanisms have been revealed [
21], thus it will not be deeply analyzed again in this paper.
The surface appearances of the CuCrSn specimens etched for 3 min in the FeCl
3 etchant are shown in
Figure 3. It can be found that effects of the GBs, grain orientation and dislocation groups on the etching can still be seen. For the cold-rolled specimen shown in
Figure 4a, the etching grooves at the GBs and dislocation groups are obvious. Whereas, compared with the specimen surface etched by the aqua regia, the etch grooves at GBs and the dislocation groups become blurred. In
Figure 4b,c, although recrystallization has occurred, it is difficult to distinguish the GBs. As the annealing temperature increases, the grain size becomes larger and the difference in etching rate due to different grain orientations becomes more and more obvious. In
Figure 4d, clear height difference between the neighboring grains can already be seen, and this difference becomes more obvious in
Figure 4e,f. However, the steps at the GBs are not so sharp as that on the surface etched by the aqua regia. In addition, the microstructures of the etched surfaces of different grains are very similar, and some residual particles can be found on the etched surfaces.
Figure 4 shows the morphology and composition of the particles on the surface etched by FeCl
3 etchant. In
Figure 4, it can be found that the size of the bright particles ranges from one to a few micrometers, and have different shapes. The elemental distribution obtained by EDS mapping reveals that these particles are Cr-rich phase precipitates, which was also observed in
Figure 1.
Figure 5b,c show the EDS point analysis sites and the corresponding composition, which also demonstrates that the particles are Cr-rich phase, and the rest of the surface is almost pure Cu. The presence of these residual particles should be due to the very low dissolution rate of the Cr-rich phase in the FeCl
3 etchant. These particles on the surface can hardly be removed by ultrasonic cleaning, thus if they are too large in size, they may be detrimental to the bonding of the molding compound in the subsequent packaging process.
Figure 5 exhibits the surface morphologies of the CuCrSn specimens etched by the CuCl
2-1 etchant. As can be seen from
Figure 5a, the dislocation groups and a large number of GBs generated by cold-rolling are indistinguishable. With the recrystallization and growth in size of the grains, the influence of grain orientation on the etched surface morphology is still not obvious, and there is almost no protruded grain on the etched surfaces, as shown in
Figure 5b–f. As a result, all the specimens in
Figure 5 have very similar morphology after etching. There are also surface residual particles on the etched surface, but their size is smaller than that in
Figure 3.
The surface morphologies of the CuCrSn specimens etched by the CuCl
2-2 etchant are presented in
Figure 6. For the cold-rolled specimen, the dislocation groups and GBs have little effect on etching, and the surface is flat, as shown in
Figure 6a. Whereas, after the recrystallization occurs, effects of the grain orientation on the etching rate become visible, and some slight protrusions can be observed (see
Figure 6b–f). Therefore, it can be predicated that even for the same etchant, the concentrations of the ions will affect the etching behavior.
Figure 7 shows the surface morphologies and elemental distributions on the surfaces etched by the two CuCl
2 etchants. For the surface etched by the CuCl
2-1 etchant, the surface microstructure is very fine, as shown in
Figure 7a. Some residual fine Cr-rich precipitates can be seen on the etched surface. For the surface etched by the CuCl
2-2 etchant shown in
Figure 7b, it seems that is not so uniform as that of
Figure 7a, and the surface roughness is higher. From the microscopic etched surface morphologies, it can be predicted that the ion concentration of the CuCl
2 etchant affects the etching process and morphology of the etched surface. With higher concentration of ions, the etching rate will be higher the surface also become coarser.
Figure 7.
Surface morphologies and elemental distributions of the 80% cold-rolled specimen etched by the: (a) CuCl2-1 and (b) CuCl2-2 etchants.
Figure 7.
Surface morphologies and elemental distributions of the 80% cold-rolled specimen etched by the: (a) CuCl2-1 and (b) CuCl2-2 etchants.
Figure 8.
3D morphologies of the different CuCrSn specimens etched by aqua regia: (a) the 80% cold-rolled specimen without annealing, and the specimens further annealed at (b) 600 °C, (c) 700 °C, (d) 750 °C, (e) 800 °C and (f) 850 °C for 15 min after cold-rolling.
Figure 8.
3D morphologies of the different CuCrSn specimens etched by aqua regia: (a) the 80% cold-rolled specimen without annealing, and the specimens further annealed at (b) 600 °C, (c) 700 °C, (d) 750 °C, (e) 800 °C and (f) 850 °C for 15 min after cold-rolling.
3.3. 3D Surface Undulations after Etching with Different Etchants
The 3D surface morphologies of the specimens etched by the 4 different etchants were characterized using the LSCM, in order to reveal the difference in height between different areas of the etched surfaces, with different colors indicating the difference in height.
Figure 9 shows the 3D morphologies of the specimens etched with the aqua regia. For the cold-rolled specimen, the deep grooves locate at the GBs and dislocation groups can be clearly seen, and the difference in height between the grooves and the surrounding areas is about 3-4 μm. After an annealing at 600 °C, the deepest sites on the etched surface locate at the GBs, as presented in
Figure 9b, and the difference in etch rates of different grains is not very obvious. As the annealing temperature increases, some protrusions with red color appear, as shown in
Figure 9c-f. The obvious difference in the etching rate occurs not only at the GBs and inside the grains, but also between different grains. Therefore, some red areas can be observed on the etched surfaces, and the height differences on the etched surfaces are about 5-6 μm.
Figure 9 shows the 3D surface morphologies of the specimens etched using the FeCl
3 etchant. For the original cold-rolled specimen, it seems that the etch grooves at the dislocation groups become blurred. The depth of the etching grooves is only about 1 μm, which is much shallower than that on the surface etched by the aqua regia, and the width reaches to about 20 μm. In
Figure 9b,c, some red protrudent particles can be seen, which are the residual Cr-rich precipitations. The height of these particles raised more than 2 μm. With increasing grain size, the protrudent etch-resistant grains can be observed, as presented in
Figure 9d–f, as well, but the height of the protrusions is only about 2-3 μm.
The 3D surface morphologies of the specimens etched by the CuCl
2-1 etchant are shown
Figure 10. It can be found that all the surfaces are very flat, with no obvious protrusion appears, as shown in
Figure 10a-c, both the dislocation groups, GBs and grain orientation have little influence on the etching surface. For the specimens with coarser grain, some very fine red particles can still be found on the etched surfaces through careful checking (see
Figure 10d–f), which consistent with the SEM images.
Figure 11 shows the 3D surface morphology of the specimens etched by the CuCl
2-2 etchant, for which the surface fluctuation is higher than that etched by the CuCl
2-1 etchant. For the cold-rolled specimen, the deformation defects have little influence on the etching surface, but the grain orientation shows obvious influence and forming some protrudent grains.
3.5. Discussion
From the above experimental results, it can be found that the grain structure, GBs and crystal defects of the CuCrSn alloy can affect the etched surface morphology. Whereas, the influence levels of these factors are quite different in the etchants with different etching mechanisms. In the aqua regia, the main substance that reacts with Cu is the concentrated nitric acid and Cl
- is easy to form complexes with Cu
2+, which decreases the reduction potential of Cu and accelerates the reaction. The reaction equation is as follows [
26]:
During the etching process, Cu is directly oxidized to Cu2+ and then rapidly dissolved. As the reactivity of atoms near the defects and GBs is higher, which accelerates the dissolution rate, the aqua regia etchant is strongly influenced by defects, GBs and crystal orientation. Besides, the bonding energies between different atomic planes are different, resulting in the difference in etching rates of grains with different orientations and step morphologies within the etched surface of the grains.
For the FeCl
3 etchant, the Fe
3+ ion on the surface of alloy oxidize Cu atom to Cu
+, the resulting CuCl is insoluble in the solution and will cover the surface of the alloy. Then, the CuCl can be further oxidized by Fe
3+ to CuCl
2, the reaction equation is as follows [
16,
27,
28]:
For etching in the FeCl
3 etchant, the Cu atoms at the surface atoms direct contact with Fe
3+ at the beginning, thus the etching rate is the fastest. Since the dissolution rate of the CuCl is low than the generation rate, the CuCl film will form on the alloy surface, which prevents the Fe
3+ from contact with the alloy surface and hinders the reaction (2). As a result, the generation rate of the CuCl film decreases until the generation and dissolution of the CuCl achieve a dynamic equilibrium, and the etching rate begins to stabilize [
29,
30]. Since there is a CuCl film that affects the etching mechanism, the surface morphology etched with the FeCl
3 etchant is obviously different from that etched with the aqua regia. The effects of defects, GBs and grain orientation on etching can still be observed and are suppressed to a high extent.
The reaction processes of the CuCl
2 etchant with the Cu alloys are as follows [
11,
12,
13]:
The Cu
2+ ion first oxidizes the Cu atom to Cu
+, which also forms the CuCl films. Unlike the FeCl
3 etchant, the CuCl film can only be dissolved through the adsorption of Cl
- to form a complex, and the dissolution rate of CuCl film in the CuCl
2 etchant is lower than that in the FeCl
3 etchant.
Figure 14 shows the characterization sites and the corresponding compositions of a specimen etched by the CuCl
2-1 etchant, with no ultrasonic cleaning after the etching, which demonstrates that the etched surface before ultrasonic cleaning is almost covered by the CuCl. Therefore, the influence of the CuCl film on the etching process is more serious, while the influence of defects, GBs and grain orientation on the etching process is much weaker, so the consistency of the etched surface in the CuCl
2 etchant is better and the surface roughness is much lower. The CuCl
2-2 etchant has a higher content of Cl
- and Cu
2+ than the CuCl
2-1 etchant, which is more erosive to the CuCl film, and the etching is less uniform. As the difference in etching rates of CuCl
2 to the matrix and the precipitates is low, the residual precipitation particles on the surfaces etched by the CuCl
2 etchant are smaller in size.