1. Introduction
Photonic devices and circuits find applications in various fields of science, including communications [
1,
2], quantum computing [
3,
4,
5], neural networks [
6,
7,
8,
9] and sensing: biosensors [
10,
11,
12,
13,
14], temperature sensors [
15] and gas detectors [
16,
17,
18]. Amorphous silicon in its hydrogenated form (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiN:H) are suitable materials for photonic components, the former is usually preferred for applications in the near infrared (NIR) [
19] and the latter is used for near infrared [
20,
21,
22] and visible light [
22,
23,
24,
25]. Hydrogenated amorphous silicon compounds have the advantage of being compatible with CMOS manufacturing technology [
23] and with low temperature deposition methods, such as Plasma-Enhanced Chemical Vapor Deposition (PECVD) [
26,
27] and Hot Wire Chemical Vapor Deposition (HWCVD) [
28], contributing to a significant reduction in manufacturing costs. The relatively low extinction coefficient of hydrogenated amorphous silicon in the optical C-band (1530-1565), makes it a suitable material for near infrared photonics. Waveguides, having a-Si:H as core material, can achieve remarkably low propagation losses, of 1 dB/cm [
29] or less [
30,
31].
There are several methods to couple light from optical fibers to photonic waveguides and vice-versa, the more common are based on [
32,
33]: end fire-coupling, grating couplers or adiabatic coupling. Grating couplers are attractive due to their off-plane coupling capability, which increases integration with other photonic devices, such as photodetectors and optical fibers. When used in conjunction with high efficiency compact broadband tapers [
34], coupling schemes featuring grating couplers, can theoretically achieve efficiencies over -3 dB. Light couplers based on diffraction gratings offer some advantages over other coupling methods, such as waveguide tapers and adiabatic couplers, in the sense that the former do not require application specific fiber terminations [
35] or anisotropic etching [
36]. The avoidance of complex and tailor-made processes increases repeatability and lowers fabrication complexity.
In this study, we compare different a-Si:H grating coupler (GC) designs, for this purpose bi-dimensional finite-difference time-domain (2D-FDTD) analysis were performed. Simulations were performed with the RSoft software package (Synopsys, Inc.), via University Donation Program [
37]. Grating couplers featuring apodization (variation of the period and fill-factor along the coupler’s length) are compared with GCs without apodization. Several approaches are taken to optimize coupling efficiency, such as: quadratic and linear variation of the effective refractive index over GCs’ length on apodized designs, lithography mask superimposition with offset and fill-factor greater than 50 % on non-apodized GCs. Due to the fact that the diffracted field decays in an exponential-like fashion in non-apodized gratings (over length), these have lower efficiencies (under -4 dB), in comparison, the diffracted field of apodized grating couplers has a distribution closer to a gaussian, resulting in higher efficiencies (over -3.2 dB). Even for designs (such as those presented in this work), which do not feature any kind of buried layer acting as a reflector.
Hydrogenated amorphous silicon (a-Si:H), the material employed in the proposed devices can be deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at low temperatures (≤ 250 °C), contributing to a production cost reduction. The a-Si:H layer can be deposited over a substrate of silica, or in alternative, above a glass surface, not requiring a silicon wafer. The grating couplers presented in this study can be fabricated with one or two lithographic masks, lowering the probability of imperfections caused by misalignment. Photolithography can be used to pattern the designs, employing either deep or extreme ultraviolet (UV) technology, thus avoiding the expensive and time-consuming electron beam (E-beam) process.
This article is an extended version of the paper published in the Proceedings of the SPIE 12880, Physics and Simulation of Optoelectronic Devices XXXII (11 March 2024) [
38].
4. Discussion
To summarize, all results obtained in this work are presented and compared with State-of-the-Art (SoA) and high efficiency grating coupler designs,
Table 4. All grating couplers presented herein were projected to operate in the optical C-band (1530-1565 nm). In
Table 4, GC stands for grating coupler, N/A means information is not available, BW corresponds to bandwidth and DBR is distributed Bragg reflector.
Despite having inferior performance when compared to the state-of-the-art in grating coupler designs, the devices have the possibility of being manufactured at a lower cost. The devices, made of a-Si:H, can be deposited at low temperature by Plasma Enhanced Chemical Vapor Deposition (PECVD), over a substrate of silica. Since silica is one of the main constituents of glass, there is also the possibility of adapting the devices to be fabricated over a substrate of this material.
Due to the fully etched grating design, all devices can be fabricated using one or two lithographic masks, making misalignment less of an issue. Designs requiring 3 lithographic processes are more affected by misalignment issues, a study about its impact must be conducted [
43]. Using the method covered in this work no silicon wafers are required, the devices work without any bottom silicon layer(s) or upper cladding and do not rely on any sort of bottom reflector for efficiency enhancement. All presented designs can be patterned by photolithography [
68], requiring either deep-UV (DUV) or extreme UV (EUV) lithographic processes.
Regarding the performance of the presented devices, it is clear that apodization plays a significative role in performance enhancement, at the cost of requiring more expensive lithographic procedures, such as DUV, EUV or E-beam. The results suggest that quadratic refractive index variation might present a small improvement in coupling efficiency when compared with linear variation. By optimizing the fill-factor or opting for a grating made from the overlap of two lithographic masks it is possible to make a compromise between performance and manufacturing costs. The chaotic (random) distribution, overlapped mask grating designs that we tested failed to achieve acceptable performance, suggesting that more complex AI-based optimization algorithms are required for achieving better performance. In addition, it might be necessary to decrease the feature size of such grating designs to improve efficiency.
6. Future Work and Improvement
In our perspective this work contributes to open ways to future research in the optoelectronics and photonic fields, undeniably several paths still need to be explored. Since the analysis performed in this work was performed using a bidimensional model, further analysis should be conducted using a tridimensional (3D) model. With one more dimension, simulation of adiabatic tapers for grating coupler (GC) connection and focusing grating designs can be studied and its geometry optimized. Following the tridimensional analysis, it is the time to proceed to the production of real-world prototypes, followed by characterization and testing.
Despite the increase in costs and complexity, the inclusion of one or more bottom layers of silicon (arranged as a DBR stack) and under-cladding thickness adjustment, could be possibilities for further improvements in performance, as well as performing a performance comparison analysis of such designs with the same GC devices featuring metal bottom reflectors.
It is also important to study the impacts of the arithmetic functions, used in the apodization of the grating couplers to tailor the shape, distribution and length of the diffracted field, and analyze its importance in matching the optical fiber’s field profile and mean field diameter (MFD). In addition, it is relevant to study the effects on the diffracted field, of the slope and initial fill-factor in linear apodization and of the coefficients of polynomial functions, like the quadratic distribution (where concavity can play a significant role).
Of course, there is also space for the utilization of machine learning (e.g., neural networks) and other artificial intelligence techniques for the optimization of apodization parameters. The study of arithmetic functions alone or combined, opens an interesting perspective in the optimization of diffraction grating couplers.
Figure 1.
Two-dimensional representations of the SMF-28 optical fiber. (a) Transversal section; (b) Longitudinal cut. Both figures show (from center to periphery), core, cladding and coating. Coating is represented with a + 5 µm deviation from the nominal value.
Figure 1.
Two-dimensional representations of the SMF-28 optical fiber. (a) Transversal section; (b) Longitudinal cut. Both figures show (from center to periphery), core, cladding and coating. Coating is represented with a + 5 µm deviation from the nominal value.
Figure 2.
Transversal cut of the proposed strip waveguide, background is air, a 220 nm hydrogenated amorphous silicon (a¬Si:H) layer (represented in blue) is deposited over silica (represented in light blue). The SiO2 is much thicker (by at least one order of magnitude) than the amorphous silicon layer (figure not up to scale). The waveguide’s height (thickness) is h, and the width is w, respectively. Since we are assuming a 2D model the influence of width was not studied.
Figure 2.
Transversal cut of the proposed strip waveguide, background is air, a 220 nm hydrogenated amorphous silicon (a¬Si:H) layer (represented in blue) is deposited over silica (represented in light blue). The SiO2 is much thicker (by at least one order of magnitude) than the amorphous silicon layer (figure not up to scale). The waveguide’s height (thickness) is h, and the width is w, respectively. Since we are assuming a 2D model the influence of width was not studied.
Figure 3.
Size mismatch between a silicon optical waveguide (≈200 nm thick) and a SMF-28 optical fiber, with core width ≈ 8200 nm and a mode field diameter (MFD) of about 10400 nm. The system operates at a wavelength of 1550 nm. This illustration represents end-fire coupling without the assistance of a 3D taper.
Figure 3.
Size mismatch between a silicon optical waveguide (≈200 nm thick) and a SMF-28 optical fiber, with core width ≈ 8200 nm and a mode field diameter (MFD) of about 10400 nm. The system operates at a wavelength of 1550 nm. This illustration represents end-fire coupling without the assistance of a 3D taper.
Figure 4.
Photonic waveguide light coupling techniques: (a) Adiabatic coupler, consisting of tapered optical fiber termination and waveguide taper; (b) Non-apodized grating coupler, including optical fiber (with only the core and reduced cladding diameter represented), grating and waveguide taper; (c) tapered lensed optical fiber termination; (d) Spot size converter based on 3D taper (optical fiber coating not represented, cladding diameter reduced). (e) Spot size converter based on inverted taper (only the fiber core is represented). Representations not up to scale and not depicting functional devices, designed for demonstration purposes only.
Figure 4.
Photonic waveguide light coupling techniques: (a) Adiabatic coupler, consisting of tapered optical fiber termination and waveguide taper; (b) Non-apodized grating coupler, including optical fiber (with only the core and reduced cladding diameter represented), grating and waveguide taper; (c) tapered lensed optical fiber termination; (d) Spot size converter based on 3D taper (optical fiber coating not represented, cladding diameter reduced). (e) Spot size converter based on inverted taper (only the fiber core is represented). Representations not up to scale and not depicting functional devices, designed for demonstration purposes only.
Figure 5.
Some of the techniques employed to improve grating coupler efficiency and/or bandwidth. (
a) Dual-level grating coupler [
43]; (
b) Grating coupler featuring stacked layers (SiN
x on SOI) [
53]; (
c) Silicon nitride grating coupler featuring a DBR stack composed of two layers of amorphous silicon (a-Si) [
60]; (
d) Example of metamaterial (bare gold nanorod), image obtained by scanning electron microscopy (SEM) [
64] – originally published by Optica Publishing Group, republished under the terms of the Creative Commons Attribution 4.0 License; (
e) Grating coupler featuring a bottom metal reflector layer [
61,
62]; (
f) Grating coupler with silicon bottom grating reflector [
56].
Figure 5.
Some of the techniques employed to improve grating coupler efficiency and/or bandwidth. (
a) Dual-level grating coupler [
43]; (
b) Grating coupler featuring stacked layers (SiN
x on SOI) [
53]; (
c) Silicon nitride grating coupler featuring a DBR stack composed of two layers of amorphous silicon (a-Si) [
60]; (
d) Example of metamaterial (bare gold nanorod), image obtained by scanning electron microscopy (SEM) [
64] – originally published by Optica Publishing Group, republished under the terms of the Creative Commons Attribution 4.0 License; (
e) Grating coupler featuring a bottom metal reflector layer [
61,
62]; (
f) Grating coupler with silicon bottom grating reflector [
56].
Figure 7.
Hypothetical diffracted field intensity distribution of (
a) non-apodized and (
b) apodized grating couplers, both figures display a theoretical fiber model with a gaussian field distribution. The figures are not up to scale and do not represent functional designs [
59].
Figure 7.
Hypothetical diffracted field intensity distribution of (
a) non-apodized and (
b) apodized grating couplers, both figures display a theoretical fiber model with a gaussian field distribution. The figures are not up to scale and do not represent functional designs [
59].
Figure 8.
Hypothetical apodized grating coupler with varying refractive index over length, both period and fill-factor vary. This is not a functional design and was not based on any distribution of the refractive index, linear, polynomial, or other. Typically grating couplers have dozens of periods. Representation not up to scale.
Figure 8.
Hypothetical apodized grating coupler with varying refractive index over length, both period and fill-factor vary. This is not a functional design and was not based on any distribution of the refractive index, linear, polynomial, or other. Typically grating couplers have dozens of periods. Representation not up to scale.
Figure 10.
Grating coupler with a linear variation of the refractive index, fill factor and period vary over the grating’s length, the refractive index is the highest close to the access waveguide (at left) and the lowest at the end of the grating coupler (at right). In this figure only 24 segments are represented. Representation is accurate to 1/100th of a micrometer (±10 nm tolerance per segment).
Figure 10.
Grating coupler with a linear variation of the refractive index, fill factor and period vary over the grating’s length, the refractive index is the highest close to the access waveguide (at left) and the lowest at the end of the grating coupler (at right). In this figure only 24 segments are represented. Representation is accurate to 1/100th of a micrometer (±10 nm tolerance per segment).
Figure 11.
Proposed quadratic variation of the refractive index over the grating coupler’s length, represented in blue. The orange dashed line corresponds to the linear regression obtained from the quadratic function values at position 0 and position 10.4 µm.
Figure 11.
Proposed quadratic variation of the refractive index over the grating coupler’s length, represented in blue. The orange dashed line corresponds to the linear regression obtained from the quadratic function values at position 0 and position 10.4 µm.
Figure 12.
Grating coupler with a quadratic variation of the refractive index, fill factor and period vary over the grating’s length. The refractive index is the highest close to the waveguide (at left) and the lowest at the end of the grating coupler (at right). Only 24 segments are represented. Representation accurate to 1/100th of a micrometer (±10 nm tolerance per segment).
Figure 12.
Grating coupler with a quadratic variation of the refractive index, fill factor and period vary over the grating’s length. The refractive index is the highest close to the waveguide (at left) and the lowest at the end of the grating coupler (at right). Only 24 segments are represented. Representation accurate to 1/100th of a micrometer (±10 nm tolerance per segment).
Figure 13.
Grating coupler with a period of 690 nm and a fill factor of 82.6 %. First 24 periods represented, coupling angle not represented.
Figure 13.
Grating coupler with a period of 690 nm and a fill factor of 82.6 %. First 24 periods represented, coupling angle not represented.
Figure 14.
Grating coupler made from the superposition of two diffraction gratings with a period of 1500 nm, the result is a grating with the same period and a fill factor of 76.(6) %.
Figure 14.
Grating coupler made from the superposition of two diffraction gratings with a period of 1500 nm, the result is a grating with the same period and a fill factor of 76.(6) %.
Figure 15.
Grating coupler made from the superposition of two diffraction gratings with periods of 1500 nm (represented in red) and 1300nm (represented in blue), the result is a grating with a chaotic (random) distribution.
Figure 15.
Grating coupler made from the superposition of two diffraction gratings with periods of 1500 nm (represented in red) and 1300nm (represented in blue), the result is a grating with a chaotic (random) distribution.
Figure 16.
Electric, Ey (a) and magnetic, Hx (b) field distributions of the fundamental quasi-transverse electric mode (quasi-TE00) of the waveguide.
Figure 16.
Electric, Ey (a) and magnetic, Hx (b) field distributions of the fundamental quasi-transverse electric mode (quasi-TE00) of the waveguide.
Figure 17.
Electric (a) and magnetic (b) field distributions of the fundamental transverse electric mode (TE00) of the single-mode optical fiber.
Figure 17.
Electric (a) and magnetic (b) field distributions of the fundamental transverse electric mode (TE00) of the single-mode optical fiber.
Figure 18.
Representation on the XZ plane of the diffracted electric field, the green (transparent filled) horizontal bar is the waveguide’s monitor and the slanted green (transparent filled) slanted bar is the diffracted field monitor. Image obtained from 2D-FDTD.
Figure 18.
Representation on the XZ plane of the diffracted electric field, the green (transparent filled) horizontal bar is the waveguide’s monitor and the slanted green (transparent filled) slanted bar is the diffracted field monitor. Image obtained from 2D-FDTD.
Figure 19.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end. The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively, measured at a monitor whose center is at a distance of 5 µm from the grating’s center.
Figure 19.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end. The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively, measured at a monitor whose center is at a distance of 5 µm from the grating’s center.
Figure 20.
Representation on the XZ plane of the diffracted electric field, the green (transparent filled) horizontal bar is the waveguide’s monitor and the slanted green (transparent filled) slanted bar is the diffracted field monitor. Image obtained from 2D-FDTD.
Figure 20.
Representation on the XZ plane of the diffracted electric field, the green (transparent filled) horizontal bar is the waveguide’s monitor and the slanted green (transparent filled) slanted bar is the diffracted field monitor. Image obtained from 2D-FDTD.
Figure 21.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end. The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively measured at a monitor whose center is at a distance of 4 µm from the grating’s center.
Figure 21.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end. The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively measured at a monitor whose center is at a distance of 4 µm from the grating’s center.
Figure 22.
Overlap with the SMF-28 optical fiber TE00 mode at the diffracted field monitor, obtained for different wavelengths. The |Overlap|2 is given in logarithmic scale, decibel (dB), wavelength in vacuum (λ0) is represented in linear scale.
Figure 22.
Overlap with the SMF-28 optical fiber TE00 mode at the diffracted field monitor, obtained for different wavelengths. The |Overlap|2 is given in logarithmic scale, decibel (dB), wavelength in vacuum (λ0) is represented in linear scale.
Figure 23.
Representation on the XZ plane of the diffracted electric field, the green (transparent filled) horizontal bar is the waveguide’s monitor and the slanted green (transparent filled) slanted bar is the diffracted field monitor. Image obtained from 2D-FDTD.
Figure 23.
Representation on the XZ plane of the diffracted electric field, the green (transparent filled) horizontal bar is the waveguide’s monitor and the slanted green (transparent filled) slanted bar is the diffracted field monitor. Image obtained from 2D-FDTD.
Figure 24.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end. The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively, measured at a monitor centered at a distance of 4 µm from the grating.
Figure 24.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end. The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively, measured at a monitor centered at a distance of 4 µm from the grating.
Figure 25.
Overlap with the SMF-28 optical fiber TE00 mode at the diffracted field monitor, obtained for different wavelengths. The |Overlap|2 is given in logarithmic scale, decibel (dB), wavelength in vacuum (λ0) is represented in linear scale.
Figure 25.
Overlap with the SMF-28 optical fiber TE00 mode at the diffracted field monitor, obtained for different wavelengths. The |Overlap|2 is given in logarithmic scale, decibel (dB), wavelength in vacuum (λ0) is represented in linear scale.
Figure 26.
Representation on the XZ plane of the diffracted electric field, the green (transparent filled) horizontal bar is the waveguide’s monitor and the slanted green (transparent filled) slanted bar is the diffracted field monitor. Image obtained from 2D-FDTD.
Figure 26.
Representation on the XZ plane of the diffracted electric field, the green (transparent filled) horizontal bar is the waveguide’s monitor and the slanted green (transparent filled) slanted bar is the diffracted field monitor. Image obtained from 2D-FDTD.
Figure 27.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end (diffraction grating starting point). The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively, measured at a monitor whose center is at a distance of 4 µm from the grating.
Figure 27.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end (diffraction grating starting point). The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively, measured at a monitor whose center is at a distance of 4 µm from the grating.
Figure 28.
Overlap with the SMF-28 optical fiber TE00 mode at the diffracted field monitor, obtained for different wavelengths. The |Overlap|2 is given in logarithmic scale, decibel (dB), wavelength in vacuum (λ0) is represented in linear scale.
Figure 28.
Overlap with the SMF-28 optical fiber TE00 mode at the diffracted field monitor, obtained for different wavelengths. The |Overlap|2 is given in logarithmic scale, decibel (dB), wavelength in vacuum (λ0) is represented in linear scale.
Figure 30.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end (diffraction grating beginning). The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively, measured at a monitor whose center is at a distance of 6 µm from the grating.
Figure 30.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end (diffraction grating beginning). The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively, measured at a monitor whose center is at a distance of 6 µm from the grating.
Figure 31.
Overlap with the SMF-28 optical fiber TE00 mode at the diffracted field monitor, obtained for different wavelengths. The |Overlap|2 is given in logarithmic scale, decibel (dB), wavelength in vacuum (λ0) is represented in linear scale.
Figure 31.
Overlap with the SMF-28 optical fiber TE00 mode at the diffracted field monitor, obtained for different wavelengths. The |Overlap|2 is given in logarithmic scale, decibel (dB), wavelength in vacuum (λ0) is represented in linear scale.
Figure 32.
Representation on the XZ plane of the diffracted electric field, the green (transparent filled) horizontal bar is the waveguide’s monitor and the slanted green (transparent filled) slanted bar is the diffracted field monitor. Image obtained from 2D-FDTD.
Figure 32.
Representation on the XZ plane of the diffracted electric field, the green (transparent filled) horizontal bar is the waveguide’s monitor and the slanted green (transparent filled) slanted bar is the diffracted field monitor. Image obtained from 2D-FDTD.
Figure 33.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end. The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively measured at a monitor whose center is at a distance of 6 µm from the grating’s center.
Figure 33.
Efficiency test, from top to bottom, the blue line represents the overlap value (with the quasi-TE00 waveguide’s mode) measured at 1 µm before the waveguide’s end. The red and green lines, represent the power and overlap (with the TE00 mode of a simulated SMF-28 optical fiber) of the diffraction field, respectively measured at a monitor whose center is at a distance of 6 µm from the grating’s center.
Table 1.
SMF-28 Typical Specifications and Performance Characteristics [
40].
Table 1.
SMF-28 Typical Specifications and Performance Characteristics [
40].
Parameter |
Value |
Attenuation |
≤ 0.22 dB/km |
Mode Field Diameter (MFD) |
10.4 ± 0.8 µm |
Core Diameter |
8.2 µm |
Cladding Diameter |
125 ± 0.7 µm |
Coating Diameter |
245 ± 5 µm |
Effective Refractive Index (Neff at rated MFD) |
1.4682 |
Refractive Index Difference |
0.36 % |
Table 2.
Period (Λ) and fill-factor (F) for each segment of the grating coupler with linear variation of the refractive index.
Table 2.
Period (Λ) and fill-factor (F) for each segment of the grating coupler with linear variation of the refractive index.
Segment Number |
Λ [nm] |
F (LE/Λ) |
Segment Number |
Λ [nm] |
F (LE/Λ) |
1 |
647 |
0.900 |
15 |
732 |
0.750 |
2 |
652 |
0.890 |
16 |
739 |
0.738 |
3 |
658 |
0.880 |
17 |
747 |
0.727 |
4 |
663 |
0.869 |
18 |
754 |
0.715 |
5 |
668 |
0.859 |
19 |
763 |
0.703 |
6 |
674 |
0.848 |
20 |
771 |
0.691 |
7 |
680 |
0.838 |
21 |
779 |
0.679 |
8 |
686 |
0.827 |
22 |
788 |
0.667 |
9 |
692 |
0.816 |
23 |
798 |
0.654 |
10 |
698 |
0.805 |
24 |
807 |
0.642 |
11 |
704 |
0.795 |
25 |
817 |
0.629 |
12 |
711 |
0.783 |
26 |
827 |
0.616 |
13 |
718 |
0.772 |
27 |
838 |
0.603 |
14 |
725 |
0.761 |
28 |
849 |
0.590 |
Table 3.
Period (Λ) and fill-factor (F) for each segment of the grating coupler with quadratic variation of the effective refractive index.
Table 3.
Period (Λ) and fill-factor (F) for each segment of the grating coupler with quadratic variation of the effective refractive index.
Segment Number |
Λ [nm] |
F (LE/Λ) |
Segment Number |
Λ [nm] |
F (LE/Λ) |
1 |
647 |
0.900 |
15 |
734 |
0.746 |
2 |
654 |
0.886 |
16 |
739 |
0.738 |
3 |
661 |
0.873 |
17 |
744 |
0.731 |
4 |
668 |
0.860 |
18 |
748 |
0.725 |
5 |
674 |
0.848 |
19 |
752 |
0.719 |
6 |
681 |
0.836 |
20 |
755 |
0.713 |
7 |
687 |
0.824 |
21 |
759 |
0.709 |
8 |
694 |
0.813 |
22 |
761 |
0.705 |
9 |
700 |
0.802 |
23 |
764 |
0.701 |
10 |
706 |
0.791 |
24 |
766 |
0.698 |
11 |
712 |
0.781 |
25 |
767 |
0.696 |
12 |
718 |
0.772 |
26 |
769 |
0.694 |
13 |
724 |
0.763 |
27 |
769 |
0.693 |
14 |
729 |
0.754 |
28 |
769 |
0.693 |
Table 4.
Comparison between the devices designed in this work with several high-performance State-of-the-Art grating couplers.
Table 4.
Comparison between the devices designed in this work with several high-performance State-of-the-Art grating couplers.
GC Design |
GC Material |
GC Feature Size* |
Coupling Efficiency |
-1 dB Bandwidth |
Bottom Reflector |
Required Masks** |
Reference |
Silicon Nitride Top Layer |
Si |
266 nm |
-1.7 dB |
64 nm |
No |
3 |
[67] |
Fully Etched Apodized |
Si |
100 nm |
-0.6 dB |
(71 nm, -3 dB) |
Yes, Al layer |
1 |
[61] |
Shift-pattern Overlay |
Si/Poly-Si |
171 nm |
-0.9 dB |
35 nm |
No |
3 |
[42] |
Dual-level GC |
Si |
60 nm |
-0.8 dB |
31.3 nm |
No |
3 |
[43] |
Bilayer GC |
Si3N4
|
N/A |
-1.0 dB |
117 nm |
Yes, DBR |
2 |
[65] |
Dual-level GC |
Si3N4/Si |
200 nm |
-1.3 dB |
80 nm |
Yes, GC |
2 |
[56] |
Chirped GC |
Si |
26 nm |
-0.1 dB |
(35 nm, -3 dB) |
Yes, DBR |
2 |
[58] |
Multilayer Bottom Reflector |
SiNx
|
86 nm |
-1.8 dB |
52.5 nm |
Yes, DBR |
1 |
[57] |
Bilayer GC |
SiNx
|
N/A |
-2.7 dB |
47.9 nm |
No |
2 |
[45] |
Non optimized GC |
a-Si:H |
510 nm |
-9.7 dB |
N/A |
No |
1 |
This work |
Fill-factor > 50 % |
a-Si:H |
120 nm |
-4.3 dB |
25 nm |
No |
1 |
This work |
Linear R.I. Variation |
a-Si:H |
60 nm |
-3.1 dB |
26 nm |
No |
1 |
This work |
Quadratic R.I. Variation |
a-Si:H |
60 nm |
-2.8 dB |
25 nm |
No |
1 |
This work |
Overlapped Micrometric |
a-Si:H |
750 nm |
-7.5 dB |
22 nm |
No |
2 |
This work |
Random Distribution |
a-Si:H |
650 nm |
-12.8 dB |
N/A |
No |
2 |
This work |