The block diagram of the tool is represented in
Figure 1. As can be seen, the tool is articulated into four blocks. Blocks #1, #2, and #3 are Matlab codes, while for #4 two options are possible: (1) if all the cells in the module share the same irradiance on the front, the same irradiance on the rear, the same operating temperature, and thus the same photogenerated current on the front and the same on the rear, as well as the same parameters, a Matlab block is used to solve the single-diode model (SDM) described in
Section 2.4 at a module level, that is, the voltage drop across the module is obtained by multiplying the voltage drop across the cell
Vcell by the number of cells embedded in the panel; (2) if there is a nonuniformity over the cells in the module (either on the front or on the rear), in terms of e.g. irradiances, electrical parameters (dictated by e.g., architectural shading, defects) then the solution is demanded to the circuit simulator PSPICE, in which each cell is
individually described by its own subcircuit. PSPICE was chosen since it is equipped with a robust engine suited for the solution of systems of nonlinear algebraic equations, which ensures short CPU times and unlikely occurrence of convergence problems.
The detailed description of each block is provided in the following.
2.3. Block #3
The inputs of block #3 are
The solar altitude α evaluated by block #1.
The azimuth angles γ, γrear, the tilt angles β, βrear, and the incidence angles θ, θrear.
The total irradiance
Gtoth, the diffuse irradiance G
dh hitting the horizontal plane (the beam, or
direct, irradiance
Gbh is determined as
Gtoth-
Gdh), and the ambient temperature
Tamb vs.
CKT at the selected geographical site. For the analysis performed in
Section 3, these data were taken from the PhotoVoltaic Geographical Information System (PVGIS) website [
28]. Here it is stated that they were evaluated for the
mean day of the chosen month from satellite data through a sophisticate algorithm accounting for sky obstruction (shading) by local terrain features (hills or mountains) calculated from a digital elevation model.
The albedo value, namely, the ratio of reflected upward radiation from the ground to the incident downward radiation upon it (typical albedo values are 0.04 for fresh asphalt, 0.1-0.15 for soil ground, 0.25-0.3 for green grass, 0.4 for desert sand, 0.55 for fresh concrete, and 0.8 for freshly fallen snow).
Some key parameters available in the datasheet, i.e., the temperature TNOCT, the short circuit current Iscnom, and the percentage temperature coefficient TCIsc of the short-circuit current Isc, the definitions of which will be provided in the following.
The block calculates
The beam irradiance impinging on the module front as [
21,
23,
29,
30,
31]
If the sky is completely and densely overcast, the same irradiance is coming from any point of the sky, which is thus called
isotropic. In this case, the diffuse irradiance is expressed as
where the dimensionless front-sky view factor
Fi (<1) accounts for the reduction of the sky dome due to the tilt angle β; using the cross-string approach [
32], it can be determined that
Formulation (12), sometimes referred to as Kondrat’yev’s view factor [
33], is widely accepted [
2,
9,
12,
20,
21,
23,
24,
25,
29,
34,
35,
36,
37,
38,
39,
40,
41,
42], and coincides with the ratio between the projection on the horizontal plane of the portion of hemisphere seen from the titled panel and the projection of the whole sky dome [
43].
Analogously, for the module rear
with the rear-sky view factor [
2,
40,
42]
If the sky is clear or at least partially cloudy, the diffuse irradiance depends on the position of the Sun in the sky due to effects like the horizon brightening and circumsolar radiation, and the sky is thus referred to as
anisotropic. In this case, the diffuse irradiance can be expressed as
where the front-sky view factor
Fa is given by the sum of two terms
Fa1 and
Fa2 accounting for the horizon brightening and circumsolar radiation, respectively [
21,
29,
31]
In (16),
and
Ai is the anisotropic index, given by
where
G0 is the solar irradiance incident on a horizontal plane outside the atmosphere, also referred to as extraterrestrial irradiance on a horizontal surface, whose expression is
Gsc being the solar constant, equal to 1353 W/m2.
Differently from the isotropic view factor Fi, the anisotropic one Fa can be >1 if the panel is oriented to the portion of the sky dome where the Sun is located. It is worth noting that Fa reduces to Fi if Gbh=0 W/m2 (uniformly cloudy, or isotropic, sky), which implies that f=0 and Ai=0.
For the rear of the module,
where
where the front-ground view factor
Falbedo is expressed as [
2,
9,
10,
12,
13,
20,
21,
29,
30,
31,
34,
35,
36,
37,
38,
40,
42,
44,
45]
Model (23). correctly works in the entire range of practical β values, namely, from β=0° (horizontal panel) to β=90° (vertically deployed panel); Falbedo=0 if β=0° since the front does not see the ground; Falbedo=0.5 if β=90° since the front sees half ground.
By referring to the module rear,
For the rear-ground factor
Falbedo,rear we examined the feasibility of the analogous of (23), namely [
39,
40,
41,
42]
Unfortunately, different from (23), model (25) does not provide meaningful results under all the possible configurations. Let us define as
d the vertical distance between the lowest point of the module and the ground. If
d=0 and β=0° the panel backside lies on the ground, which would imply
Gd,albedo,rear=0, but (25) predicts
Falbedo,rear=1, which is the consequence of its view factor nature. To tackle this issue, we propose an alternative, still simple enough, model for factor
Falbedo,rear to also account for the dependence on
d, which is given by
where
Hpanel being the module height. The behavior of
Falbedo,rear expressed by (26), (27) as a function of the ratio
d/
Hpanel for various tilt angles β is reported in
Figure 3.
If
d=0, then
grear=-1 and (26) reduces to
Which shows that if β=0°, then Falbedo,rear=0, i.e., there is no reflection contribution since the panel lies on the ground, while if β=90°, then Falbedo,rear=0.5 as the module backside sees half ground.
For β<90°, Falbedo,rear increases with d, as the module rear sees more and more ground. If d is significantly higher than Hpanel, then then grear=1 and (26) saturates to (25), from which, if β=0°, then Falbedo,rear=1 as in this case the rear of the horizontal suspended panel sees all the ground.
If β=90°, then Falbedo,rear=0.5 independently of d, since it can be assumed that the rear sees half ground regardless of the distance from panel to ground.
This simple model given by (24) with (26), (27) inherently assumes that the ground is completely unshaded. If a large portion of the ground is shaded (e.g., in the case of a large PV field composed of horizontal bifacial modules suspended on a framework), (24) can be replaced by
Accounting for a limited shadow on an irradiated ground, as the one produced by the panel itself, would markedly increase the complexity of the model; examples are the approaches in [
12,
13,
40] under the assumption of infinite-length modules, and the complex procedure in [
46].
for an isotropic sky, or
for an anisotropic one.
The total irradiance on the rear is evaluated as
for an isotropic sky, and
for an anisotropic one.
The operating temperature
T of the cells as a function of
CKT. By disregarding the self-heating, which is a reasonable approximation when the cells are
producing power,
T [°C] is a function of
Tamb and
G according to the following linear law [
6,
12,
26,
47,
48]:
TNOCT being the normal (nominal) operating cell temperature (NOCT) measured under open-circuit conditions at Tamb=20°C, nominal irradiance GnomT=800 W/m2 impinging on the front, AM 1.5, and wind speed lower than 1 m/s. As mentioned earlier, Tamb vs. CKT is available from PVGIS, and the total irradiance on the panel front G was previously determined by the tool. Formulation (34) is also referred to as NOCT model.
One the irradiance
G and the temperature
T vs.
CKT are known, the current photogenerated by the module front is evaluated for each
CKT as [
23,
49]
where the datasheet parameter
Iscnom is the short-circuit current measured by keeping the frontside under standard test conditions (STCs), i.e., nominal irradiance
Gnom=1000 W/m
2, 1.5 Air Mass, and cell temperature equal to 25°C, and covering the backside or at least markedly limiting its irradiance. It is worth noting that the first term on the RHS is the photogenerated current that would be obtained for an irradiance
G at
T=25°C. The temperature coefficient κ [A/°C] can be easily determined from the datasheet parameter
TCIsc [%/°C], namely, the percentage temperature coefficient of
Isc measured by the module manufacturer under the same conditions mentioned above;
TCIsc is given by
Equation (35) allows accounting for the positive temperature coefficient of
Iph due to the bandgap shrinking and the resulting increase in the number of photons with enough energy to generate electron-hole pairs, and can be recast as
where
T0 is a reference temperature and Δ
T=
T-
T0; by assuming
T0=27°C [
39,
50]
The current photogenerated by the module rear vs.
CKT is calculated as
where
ERF (<1) is an efficiency reduction factor needed to account for the fact that the PV cell is asymmetric, being technologically designed to maximize light absorption on the front (The parameter usually provided in the datasheet of the module is the so-called
bifaciality factor, namely, the ratio between the power produced by the rear illuminated under STCs while the front is covered, and the power produced by the front illuminated under STCs while the rear is covered), and
T is given by (34), that is, it assumed to coincide with the temperature due to the irradiance
G impinging on the panel front.
2.4. Block #4
Block #4 is intended to evaluate the I–V characteristic of the module (and consequently the maximum produced power Pmax) at each CKT during the day.
The individual cell is described through an extended version of the SDM presented in [
39,
41,
48,
50] and inspired by [
51]. In particular, the cell current
Icell is expressed as
Iph and
Iph,rear being given by (38) and (39). In (40),
ID is the current flowing through the intrinsic resistance-free diode. The expression of
ID is derived from the well-known Shockley’s equation
where
VD is the voltage drop across the diode, given by
Vcell and
Rs being the voltage drop over the cell and the series resistance, the dimensionless parameter η is the ideality coefficient, and
is the thermal voltage,
k and
q being the Boltzmann’s constant and the elementary charge. As described in detail in [
41,
50,
52], (41) can be conveniently modified into
which better evidences the diode current dependence on the temperature rise Δ
T=
T-
T0. The value of the key coefficient ϕ
0 is extracted through the following procedure. As illustrated in
Figure 1, block #4 also receives the open-circuit voltage
Vocnom of the module front and the temperature coefficient
TCVoc of the open-circuit voltage
Voc, both measured by keeping the frontside under STCs and the backside covered;
TCVoc is given by
from which
is determined. Then block #4 executes Matlab simulations of the module with covered backside (setting
Iph,rear=0 A) with
G=
Gnom=1000 W/m
2 and
T=25°C and 30°C and automatically calculates
; parameter ϕ
0 is calibrated to obtain a good agreement between the
value resulting from simulations and the one calculated from (44).
Ish is the current traversing the shunt resistance
Rsh, given by
Resistance
Rsh is assumed to be temperature-insensitive; nevertheless,
Rsh might exhibit a negative temperature coefficient induced by the thermal trapping-detrapping of carriers through the defect states in the space-charge region [
53].
Iav is the (positive)
avalanche current induced by a reiterate impact-ionization mechanism (avalanche multiplication) in the space-charge region of the cell when subject to high reverse voltages, e.g., in the presence of localized shading;
Iav is expressed as
where
BV (<0 V) is the breakdown voltage of the junction, while
aII and
mII are dimensionless fitting parameters. From (46) it can be inferred that, if
VD is positive, then the denominator of (46) is high and
Iav is negligible; instead, if
VD is negative and approaches the negative
BV, then the positive
Iav increases and tends to infinity. The temperature-related mitigation of avalanche multiplication can be enabled through the relation
bII [°C-1] (>0) being another fitting parameter.
For the series resistance
Rs, a positive temperature coefficient is accounted for according to the following power relation:
with
mR>0, although in principle any other law (e.g., exponential [
54] or linear) can be implemented.
It was mentioned that if all the cells in the module share the same G, Grear, T, and thus the same Iph, Iph,rear, as well as the same parameters, the tool resorts to Matlab to solve the SDM given by (40) with (42), (43), (45), (46), (48) at a module level: once the Icell–Vcell characteristic is evaluated at a selected CKT, the I–V curve of the module is obtained by considering I=Icell and V=N∙Icell, N being the number of cells in the module.
Instead, if any nonuniformity is present, the commercial circuit simulator OrCAD PSPICE is enabled to compute the
I–
V characteristic by extending the approach proposed in [
39,
41,
48,
50,
55] for monofacial panels to the bifacial counterparts. Such an approach can be described as follows.
The module is composed by N series-connected cells, each modeled with a subcircuit implementing the SDM described above, which is fed with G, Grear, ΔT.
The module can be partitioned into a chosen number of subpanels, each equipped with a bypass diode.
The PSPICE temperature of all components embedded in the circuit is forced to the reference value T0=27°C; the temperature rise ΔT, represented as a voltage, is provided to analog behavioral modeling, or ABM, components (nonlinear current/voltage sources) to modify the temperature-sensitive parameters.
An illustrative sketch of the subcircuit modeling the individual cell is shown in
Figure 4.
The ABM components
A1 and
A2 calculate the current photogenerated on the module front using (38) and (39), respectively. The standard diode, being at the reference temperature
T0, conducts the current
VT0 being equal to . In order to allow the flow of the temperature-dependent current ID(ΔT) given by (43) in the diode branch, the ABM B is used, which computes and forces the current ID(ΔT)-ID(T0), where ID(ΔT) is given by (43).
To account for the avalanche multiplication, the cell current Icell is computed as the sum of an avalanche-free current (i.e., the current that would flow in the absence of avalanche), and an avalanche-dictated current Iav forced by the ABM C and given by (46).
The power dependence on temperature of the series resistance
Rs is implemented by forcing on the branch traversed by
Icell a voltage drop given by the product by
Icell and
Rs, where
Rs is expressed by (48). This is put into practice by making use of the ABM designated as
D in
Figure 4, which accepts as inputs the temperature rise Δ
T and the current
Icell (transformed into a voltage) and imposes the drop
Icell∙
Rs(Δ
T).