Preprint Article Version 1 This version is not peer-reviewed

Ni-based Semiconductors From Ldh-precursors Synthetized Using Amines

Version 1 : Received: 26 July 2024 / Approved: 27 July 2024 / Online: 29 July 2024 (10:59:53 CEST)

How to cite: Misol, A.; Jiménez, A.; Benito, P.; Labajos, F. M.; Rives, V. Ni-based Semiconductors From Ldh-precursors Synthetized Using Amines. Preprints 2024, 2024072236. https://doi.org/10.20944/preprints202407.2236.v1 Misol, A.; Jiménez, A.; Benito, P.; Labajos, F. M.; Rives, V. Ni-based Semiconductors From Ldh-precursors Synthetized Using Amines. Preprints 2024, 2024072236. https://doi.org/10.20944/preprints202407.2236.v1

Abstract

NiO nanoparticles have been synthetized by calcination of layered double hydroxides (LDHs) precursors prepared using dimethylamine (DMA) as a precipitating agent. The incorporation of Ce and La oxides to the structure was investigated. The samples were characterized by element chemical analysis, powder X-ray diffraction, FT-IR spectroscopy, thermal analysis and specific surface area analysis. Furthermore, the optical band gaps of the semiconductor samples were estimated by ultraviolet-visible diffuse reflectance spectroscopy. The results showed that it is possible to obtain Ni-LDHs precursor with good crystallinity and a small crystal size, which can be used as precursors of NiO nanoparticles with ≈3.7 nm of crystal size. The semiconductors obtained have good values of band gaps with rather large specific surface areas, which make them suitable for their use as photocatalysts.

Keywords

LDH; Hydrotlacita-like; Nickel óxide semiconductor

Subject

Chemistry and Materials Science, Electronic, Optical and Magnetic Materials

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