Version 1
: Received: 21 August 2024 / Approved: 22 August 2024 / Online: 24 August 2024 (10:47:17 CEST)
How to cite:
Slimani, M. A.; Cloutier, S. G.; Izquierdo, R. Enhancing Performance of Nanocrystalline SnO2 by Photonic Curing Using Impedance Spectroscopy Analysis. Preprints2024, 2024081686. https://doi.org/10.20944/preprints202408.1686.v1
Slimani, M. A.; Cloutier, S. G.; Izquierdo, R. Enhancing Performance of Nanocrystalline SnO2 by Photonic Curing Using Impedance Spectroscopy Analysis. Preprints 2024, 2024081686. https://doi.org/10.20944/preprints202408.1686.v1
Slimani, M. A.; Cloutier, S. G.; Izquierdo, R. Enhancing Performance of Nanocrystalline SnO2 by Photonic Curing Using Impedance Spectroscopy Analysis. Preprints2024, 2024081686. https://doi.org/10.20944/preprints202408.1686.v1
APA Style
Slimani, M. A., Cloutier, S. G., & Izquierdo, R. (2024). Enhancing Performance of Nanocrystalline SnO<sub>2</sub> by Photonic Curing Using Impedance Spectroscopy Analysis. Preprints. https://doi.org/10.20944/preprints202408.1686.v1
Chicago/Turabian Style
Slimani, M. A., Sylvain G. Cloutier and Ricardo Izquierdo. 2024 "Enhancing Performance of Nanocrystalline SnO<sub>2</sub> by Photonic Curing Using Impedance Spectroscopy Analysis" Preprints. https://doi.org/10.20944/preprints202408.1686.v1
Abstract
Wide-bandgap tin oxide (SnO2) thin-films are frequently used as an electron-transporting layers in perovskite solar cells due to superior thermal and environmental stabilities. However, its crystallization by conventional thermal methods requires typical temperatures between 300 and 900 ◦C [1] with up-to 60 min crystallization times. These post-processing conditions severely limit the choice of substrates and reduce the large-scale manufacturing capabilities. This work describes the intense pulsed light-induced crystallization of SnO2 thin films using only 500 μs of exposure time. Thin-film properties are investigated using both impedance spectroscopy and photoconductivity characteristic measurements. Nyquist plot analysis establishes that the process parameters have a significant impact on the electronic and ionic behaviors of the SnO2 films. Most importantly, we demonstrate that light-induced crystallization yields improved topography and excellent electrical properties through enhanced charge transfer, improved interfacial morphology and better ohmic contacts compared to thermally-annealed SnO2 films.
Keywords
Impedance spectroscopie; Photonic curing; SnO2; Dark injection current transient; Photo-Celiv
Subject
Chemistry and Materials Science, Materials Science and Technology
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
