PreprintArticleVersion 1This version is not peer-reviewed
Exploring the Relationship Between Electrical Characteristics and Changes in Chemical Composition and Structure of OSG Low-k Films under Thermal Annealing
Version 1
: Received: 25 September 2024 / Approved: 26 September 2024 / Online: 26 September 2024 (10:54:45 CEST)
How to cite:
Gerelt-Od, M.; Kolesnikova, T. G.; Mokrushev, P. A.; Vishnevskiy, A. S.; Vorotilov, K. A.; Gismatulin, A. A.; Gritsenko, V. A.; Baklanov, M. R. Exploring the Relationship Between Electrical Characteristics and Changes in Chemical Composition and Structure of OSG Low-k Films under Thermal Annealing. Preprints2024, 2024092101. https://doi.org/10.20944/preprints202409.2101.v1
Gerelt-Od, M.; Kolesnikova, T. G.; Mokrushev, P. A.; Vishnevskiy, A. S.; Vorotilov, K. A.; Gismatulin, A. A.; Gritsenko, V. A.; Baklanov, M. R. Exploring the Relationship Between Electrical Characteristics and Changes in Chemical Composition and Structure of OSG Low-k Films under Thermal Annealing. Preprints 2024, 2024092101. https://doi.org/10.20944/preprints202409.2101.v1
Gerelt-Od, M.; Kolesnikova, T. G.; Mokrushev, P. A.; Vishnevskiy, A. S.; Vorotilov, K. A.; Gismatulin, A. A.; Gritsenko, V. A.; Baklanov, M. R. Exploring the Relationship Between Electrical Characteristics and Changes in Chemical Composition and Structure of OSG Low-k Films under Thermal Annealing. Preprints2024, 2024092101. https://doi.org/10.20944/preprints202409.2101.v1
APA Style
Gerelt-Od, M., Kolesnikova, T. G., Mokrushev, P. A., Vishnevskiy, A. S., Vorotilov, K. A., Gismatulin, A. A., Gritsenko, V. A., & Baklanov, M. R. (2024). Exploring the Relationship Between Electrical Characteristics and Changes in Chemical Composition and Structure of OSG Low-k Films under Thermal Annealing. Preprints. https://doi.org/10.20944/preprints202409.2101.v1
Chicago/Turabian Style
Gerelt-Od, M., Vladimir A. Gritsenko and Mikhail R. Baklanov. 2024 "Exploring the Relationship Between Electrical Characteristics and Changes in Chemical Composition and Structure of OSG Low-k Films under Thermal Annealing" Preprints. https://doi.org/10.20944/preprints202409.2101.v1
Abstract
The paper is dedicated to studying the influence of annealing temperature on the chemical, structural and electrophysical properties of low-k films made from porous organosilicate glasses containing terminal methyl groups. The films were deposited using centrifugation, followed by drying at 200 °C and annealing at temperatures ranging from 350 °C to 900 °C. Changes in refractive index, porosity, pore size, chemical composition, and electrical properties as a function of annealing temperature are evaluated. The results of JV measurements indicate that the methyl-modified film, which was annealed at 450 °С, demonstrates minimal leakage currents. This phenomenon can be explained by the almost complete removal of surfactant residues and non-condensed silanols, as well as the minimal thermal degradation of methyl groups. The results of the study on leakage current models in methyl-modified films, obtained at various annealing temperatures, lead us to conclude that the predominant mechanism of charge carrier transfer is Poole–Frenkel emission.
Chemistry and Materials Science, Surfaces, Coatings and Films
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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