Preprint Article Version 1 This version is not peer-reviewed

RF Dielectric Permittivity Sensing of Molecular Spin State Switching Using a Tunnel Diode Oscillator

Version 1 : Received: 6 November 2024 / Approved: 6 November 2024 / Online: 7 November 2024 (03:30:34 CET)

How to cite: Soroceanu, I.; Diaconu, A.; Salmon, L.; Molnár, G.; Rotaru, A. RF Dielectric Permittivity Sensing of Molecular Spin State Switching Using a Tunnel Diode Oscillator. Preprints 2024, 2024110482. https://doi.org/10.20944/preprints202411.0482.v1 Soroceanu, I.; Diaconu, A.; Salmon, L.; Molnár, G.; Rotaru, A. RF Dielectric Permittivity Sensing of Molecular Spin State Switching Using a Tunnel Diode Oscillator. Preprints 2024, 2024110482. https://doi.org/10.20944/preprints202411.0482.v1

Abstract

We introduce a novel approach to study the dielectric permittivity of spin crossover (SCO) molecular materials using a radio frequency (RF) resonant tunnel diode oscillator (TDO) circuit. By fabricating a parallel plate capacitor using SCO particles embedded into a polymer matrix as an integral part of the LC tank of the TDO we were able to extract the temperature dependence of the dielectric permittivity from frequency measurements for a wide selection of resonance values, spanning from 100 kHz up to 50 MHz, with great precision (less than 2 ppm), in a broad temperature range. By making use of this simple electronic circuit to explore the frequency and temperature dependent dielectric permittivity of the compound Fe[(Htrz)2(trz)]BF4 we demonstrate the reliability and resolution of the technique and show how the results compare with those obtained using complex instrumentation.

Keywords

tunnel diode oscillator; spin crossover; RF dielectric permittivity

Subject

Physical Sciences, Applied Physics

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