ARTICLE
|
doi:10.20944/preprints202405.0397.v1
Subject:
Electrical And Electronic Engineering,
Engineering
Keywords:
Keywords: FinFET,.Early Voltage, channel length and width
Online: 7 May 2024 (14:11:43 CEST)
ARTICLE
|
doi:10.20944/preprints202306.0958.v1
Subject:
Engineering,
Electrical And Electronic Engineering
Keywords:
graphene nano-ribbon FET; single event upset; SRAM; stability; FinFET
Online: 13 June 2023 (16:22:35 CEST)
ARTICLE
|
doi:10.20944/preprints202306.0206.v1
Subject:
Engineering,
Electrical And Electronic Engineering
Keywords:
Gate Resistance; Characterization; de-embedding; radio-frequency MOSFETs (RF MOS- 7 FETs); FinFET
Online: 2 June 2023 (13:39:46 CEST)
ARTICLE
|
doi:10.20944/preprints201811.0047.v1
Subject:
Engineering,
Electrical And Electronic Engineering
Keywords:
gate-induced drain leakage (GIDL), drain-induced barrier lowering (DIBL), recessed channel array transistor (RCAT), on-current (Ion), off-current (Ioff), subthreshold slope (SS), threshold voltage (VTH), saddle FinFET (S-FinFET), Potential Drop Width (PDW), Shallow Trench Isolation (STI).
Online: 2 November 2018 (10:21:47 CET)