Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes
Version 2 : Received: 17 February 2023 / Approved: 17 February 2023 / Online: 17 February 2023 (07:14:52 CET)
How to cite: Nagata, K.; Matsubara, T.; Saito, Y.; Kataoka, K.; Narita, T.; Horibuchi, K.; Kushimoto, M.; Tomai, S.; Katsumata, S.; Honda, Y.; Takeuchi, T.; Amano, H. Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes. Preprints 2023, 2023020249. https://doi.org/10.20944/preprints202302.0249.v1 Nagata, K.; Matsubara, T.; Saito, Y.; Kataoka, K.; Narita, T.; Horibuchi, K.; Kushimoto, M.; Tomai, S.; Katsumata, S.; Honda, Y.; Takeuchi, T.; Amano, H. Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes. Preprints 2023, 2023020249. https://doi.org/10.20944/preprints202302.0249.v1
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