Forward-bias hole injection from 10 nm-thick p-type Nickel Oxide layers into 10 um-thick n-type Gallium Oxide in a vertical NiO/Ga2O3 p-n heterojunction leads to more than a factor of 2 enhancement of photoresponse measured from this junction. While it takes only 600 seconds to obtain such a pronounced increase in photoresponse, it persists for hours, indicating feasibility of photovoltaic device performance control. The effect is ascribed to charge injection-induced increase of minority carrier (hole) diffusion length (resulting in improved collection of photogenerated non-equilibrium carriers) in n-type beta-Ga2O3 epitaxial layers, due to trapping of injected charge (holes) on deep meta-stable levels in the material and subsequent blocking of non-equilibrium carrier recombination through these levels. Suppressed recombination leads to increased non-equilibrium carrier lifetime, in turn determining a longer diffusion length and being the root-cause for the effect of charge injection.