ARTICLE
|
doi:10.20944/preprints202409.0027.v1
Subject:
Electrical And Electronic Engineering,
Engineering
Keywords:
Quasi-3D scaling theory; W-gate MOSFET; FinFET; nanosheet transistor; ballistic effects; ballistic threshold voltage; Fermi-Dirac distribution function; density of state (DOS); effective mass
Online: 2 September 2024 (13:15:25 CEST)