LLC resonant converters have emerged as essential components in DC charging station modules, thanks to their outstanding performance attributes such as high power density, efficiency, and compact size. The stability of these converters is crucial for vehicle endurance and passenger experience, making reliability a top priority. However, malfunctions in the switching transistor or current sensor can hinder the converter’s ability to maintain a resonant state and stable output voltage, leading to a notable reduction in system efficiency and output capability.This article proposes a fault diagnosis strategy for LLC resonant converters utilizing a reduced order interval sliding mode observer. Initially, an augmented generalized system for the LLC resonant converter is developed to convert current sensor faults into generalized state vectors. Next, the application of matrix transformations plays a critical role in decoupling open-circuit faults from the inverter system’s state and current sensor faults. To achieve accurate estimation of phase currents and detection of current sensor faults, a reduced-order interval sliding mode observer has been designed. Building upon the estimation results generated by this observer, a diagnostic algorithm featuring adaptive thresholds has been introduced. This innovative algorithm effectively differentiates between current sensor faults and open switch faults, enhancing fault detection accuracy. Furthermore, it is capable of localizing faulty power switches and estimating various types of current sensor faults, thereby providing valuable insights for maintenance and repair. The robustness and effectiveness of the proposed fault diagnosis algorithm have been validated through experimental results and comparisons with existing methods, confirming its practical applicability in real-world inverter systems.

Insulated Gate Bipolar Transistor (IGBT) may convey high current and sustain high breakdown voltages; it may provide high power control. In a sense, how IGBT demonstrates the capability of power control was not specifically described, and the equivalent bipolar junction transistors (BJT) activated by an applied bias to the insulated gate is intriguing. As seen in Figure 1, IGBT shows an equivalent circuit structure containing two types of BJT, (NPN-type Bipolar transistor and PNP-type Bipolar transistor), which can be modeled as diode-associated transistor. Apparently, as a bias applies to the controlling gate, the channel beneath the gate oxide gets strongly inversed and turns out to be conductive just like what happens on metal-oxide-silicon field effect transistor (MOSFET), which provides necessary igniting currents to both BJTs and thus causes high current gain flowing through them-selves from the bottom. A proposed and renewed formula provides addressing the above scenario and successfully fitting the measured data that forms the characteristic curves. Some parameters in the proposed formula, which includes size and mobility associated constant, threshold voltage, and Early-Voltage-related lambda for MOSFET, explain and explore the underlying physics. IGBT thus enjoy high input impedance and high current gain due to MOSFET (Insulated Gate) and BJT, respectively. This formula combines both merits of MOSFET and BJT in order to fit the measured data. Indeed, the formula intimately fits IGBT electrical characteristic curves, and thus may be qualified and served as a model. The new model is then advisable for designing power integrated circuit to exactly achieve power saving, power control, and power efficiency.

Hybrid Power Switches (HPS) combine the advantages of SiC unipolar and Si bipolar devices and therefore can bridge the gap between these technologies. In this paper, the performance of a hybrid power switch configuration based on the latest SiC MOSFET and Si IGBT technologies is presented. The device is evaluated through experimental measurements of its characteristics under various conditions. The results show the HPS can achieve switching losses as low as a SiC MOSFET while offering the high current capability of the IGBT without significant increase in costs.

This paper proposes a novel method for optimizing the Cauer-type thermal network model considering both the temperature influence on the extraction of parameters and the errors caused by the physical structure. In terms of prediction of the transient junction temperature and the steady-state junction temperature, the parameters of conventional Cauer-type are modified, and the general method for estimating junction temperature is studied by using the adaptive thermal network model. The results show that junction temperature estimated by adaptive Cauer-type thermal network model is more accurate than that of the conventional model.

The problem of health status prediction of insulated-gate bipolar transistors (IGBTs) gains a lot of attention in the field of health management of power electronic equipment. The performance degradation of IGBT gate oxide layer is one of the important failure modes. In view of failure mechanism analysis and easy implementation of monitoring circuit, this paper selects the gate leakage current of IGBT as the precursor parameter of gate oxide degradation, and uses time domain characteristic analysis, gray correlation degree, Mahalanobis distance, Kalman filter and other methods to carry out feature selection and fusion, and finally obtains a health indicator characterizing the degradation of IGBT gate oxide. Based on the Convolutional Neural Network and Long Short-Term Memory (CNN-LSTM) network, this paper constructs an IGBT gate oxide degradation prediction model, and performs experimental analysis on the dataset released by NASA-Ames Laboratory, and the average absolute error of performance degradation prediction is as low as 0.0216. Compared with Long Short-Term Memory (LSTM), Convolutional Neural Network (CNN), Support Vector Regression (SVR) and CNN-LSTM models, CNN-LSTM network has the highest prediction accuracy. These results show the feasibility of gate leakage current as a precursor parameter of IGBT gate oxide layer failure, as well as the accuracy and reliability of the CNN-LSTM prediction model.