Semiconductor technology is the backbone of modern innovations, propelling technological advancements in industries such as electronics, renewable energy, telecommunications, and health-related fields. This review expatiates the fundamental properties and working principles of semiconductor materials that determine device performances, while also tracing the historical trajectory of these technologies from the inception of the transistor to pioneering developments, such as tunnel gate transistors and 2D materials like graphene. Specific challenges such as material constraints, manufacturing complexities, and environmental impacts are highlighted. In response to such challenges, measures for the improvement of sustainability, energy saving, and waste minimization in production are discussed. The research also responds to the extended effects of globalization, including the disruptions like COVID-19 pandemic, on supply chain and emphasizes on the importance of developing resilient production frameworks for future growth. Additionally, this work highlights emerging technologies, including quantum computing, artificial intelligence integration, and nanotechnology, which are poised to redefine data processing and storage. The research vindicates the necessity of innovation and sustainability as the key motivators for enhancing the capabilities of semiconductors and global technology.

This study introduces a gate design that uses pass transistor switches and enables the implementation of all nec- necessary logic gates with a single structure. This gate design can be used for efficient circuit resizing and creating secure obfuscated circuits. This work also presents simulation results that demonstrate the effectiveness of the gate in performing various logic gate operations.

MicroRNAs are small ribonucleotides which act as key gene regulators. Their altered expression is often associated with onset and progression of several human diseases, including cancer. Given their potential use as biomarkers, there is a need to find detection methods of microRNAs suitable for use in clinical setting. Field Effect Transistor based biosensors (bioFETs) appear to be valid tools to detect microRNAs, since they may reliably quantitate the specific binding between the immobilized probe and free target in solution through an easily detectable electrical signal. We have investigated the detection of human microRNA 155 (miR-155) using an innovative cap-turing probe constituted by a synthetic peptide nucleic acid (PNA), which has the advantage to form a duplex even at ionic strengths approaching the physiological conditions. With the aim to develop an optimized BioFET setup, the interaction kinetics between miR-155 and the chosen PNA was preliminary investigated by Surface Plasmon Resonance (SPR). By exploiting both these results and our custom-made bioFET system, we were able to attain a low-cost, real-time, label-free, highly specific detection of miR-155 in the nano-molar range.

We study the effect of polymer coating, pressure, temperature and light on the electrical characteristics of monolayer WSe₂ back-gated transistors with quasi-ohmic Ni/Au contacts. We prove that the removal of a layer of poly(methyl methacrylate) or a decrease of the pressure change the device conductivity from p to n-type. We demonstrate a gate-tunable Schottky barrier at the contacts and measure a barrier height of ~70 meV in flat-band condition. We report and discuss a temperature-driven change in the mobility and the subthreshold slope which we use to estimate the trap density at the WSe₂/SiO₂ interface. We study the spectral photoresponse of the device, that can be used as a photodetector with a responsivity of ~0.5 AW^-1 at 700 nm wavelength and 0.37 mW/cm² optical power.

Doping can alter the electronic and thermoelectric attributes of an organic semiconductor system. These alterations can enable viable tunable devices that have applications in temperature sensing for environmental controls. Here we demonstrate a dual-modulation organic field-effect transistor (OFET) where temperature effectively modulates the current-voltage characteristics of the OFET and gate voltage modulates the thermoelectric properties of the active layer. Poly(3-hexylthiophene-2,5-diyl) (P3HT) was utilized as the host donor polymer, iodine was utilized as the dopant acceptor molecule Finished devices were characterized by a semiconductor analyzer system with temperature controlled by two thermoelectric cooling plates. The doping of iodine in the range of 0.25% to 0.5% mole ratio with respect to the P3HT exhibited the greatest on-off ratio of the investigated dopant concentrations. Iodine doping concentrations of 0.5% mole ratio or less can greatly improve the thermoelectric properties of a binary P3HT-based system and the current-voltage performance of the dual-modulation device.

This work reports the first nanocrystalline SnON (7.6 % Nitrogen content) n-type nanosheet Field-Effect Transistor (nFET) with transistor’s effective mobility (µeff) as high as 357 and 325 cm2/V-s at electron density (Qe) of 5×1012 cm-2 and ultra-thin body thickness (Tbody) of 7 and 5 nm, respectively. At the same Tbody and Qe, these µeff values are significantly higher than single crystalline Si, InGaAs, thin-body Si-on-Insulator (SOI), two-dimensional (2D) MoS2 and WS2. New discovery of slower µeff decay rate at high Qe than SiO2/bulk-Si universal curve was found, owing to one order of magnitude lower effective field (Eeff) by more than 10 times higher dielectric constant () in channel material, which keeps the electron wave-function away from the gate-oxide/semiconductor interface and lowers the gate-oxide surface scattering. In addition, the high µeff is also due to the overlapped large radius s-orbitals, low 0.29 mo effective mass (me*) and low polar optical phonon scattering. SnON nFETs with record-breaking µeff and quasi-2D thickness enable potential monolithic three-dimensional (3D) integrated circuit (IC) and embedded memory for 3D biological brain-mimicking structures.

The zero offset voltage in anti-aliasing low-pass filters (LPF) included at the ADC input has a significant effect on the effective bit rate of the ADC. The article discusses methods for minimizing the systematic component of the zero offset voltage (V_OS) of operational amplifiers (Op-Amp) in the structure of the LPF, due to the degradation of the current gain of the base (b) of bipolar transistors for an extremely common subclass of Op-Amp with one high-impedance node. The methods of matching a high-impedance Op-Amp node and a buffer amplifier with the help of special correcting SCM^p and SCMⁿ multipolars are proposed. Methods of description and formation of the given coefficients of weak current asymmetry of typical Op-Amp functional units (current mirrors, input DS, buffer amplifiers, SRC, etc.) are presented. As an example, the results of computer simulation of GaAs Op-Amp with small V_OS performed on JFET field and p-n-p bipolar transistors are given.

Vertical-channel organic dual-gate/base transistors would be highly interesting since vertical organic transistors are the fastest organic transistors demonstrated today. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we successfully realize a new device concept of vertical organic permeable dual-base transistors (OPDBTs), where either of both base electrodes can be used to change the on-currents and tune the threshold voltages. The optimized devices yield a high on-current density of 1.54 A cm^-2 and a large current gain of 9.2×10⁵, corresponding to a high transmission value of 99.998%. The detailed operation mechanisms are investigated by calibrated TCAD simulations with the Poole-Frenkel mobility model, Gaussian density of states and tunneling model. Finally, high-performance logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single OPDBT operating at supply voltages of < 2.0 V. We believe that OPDBTs offer a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits.

Conjugated polymers (CPs) offer potentials for sustainable semiconductor devices due to their low cost, and inherent molecular self-assembly. Enhanced crystallinity and molecular orientation in thin films of solution-processable CPs have significantly improved organic electronic device per-formance. In this work, three methods namely spin-coating, dip-coating, and unidirectional float-ing-film transfer method (UFTM) were utilized with their parametric optimization for fabricating RR-P3HT films. These films were then utilized for their characterization via optical and micro-structural analysis to elucidate dominant roles of molecular orientation, and crystallinity in con-trolling charge transport in organic field-effect transistors (OFETs). OFETs fabricated by RR-P3HT thin films using spin-coating and dip-coating displayed field-effect mobility (μ) of 8.0 × 10-4 cm2V-1s-1 and 1.3 × 10-3 cm2V-1s-1, respectively. This two-time enhancement in (µ for dip-coated films was attributed to its enhanced crystallinity. Interestingly, UFTM films based OFETs demon-strated μ of 7.0 × 10-2 cm2V-1s-1, >100 times increment as compared to its spin-coated counterpart This superior device performance is attributed to synergistic influence of higher crystallinity and molecular orientation. Since the crystallinity of dip-coated and UFTM-thin films are similar ~50 times improved µ of UFTM thin films suggest a dominant role of molecular orientation as com-pared to crystallinity in controlling the charge transport.

The circuitry of the summarized "floating" differential stages (FDS) based on complementary field-effect transistors with a control p-n junction (CJFET), intended for use in low-noise analog microcircuits, for example, operational amplifiers. The results of modeling the flow characteristics of one of the CJFET FDSs in the LTSpice XVII environment at low temperatures (down to -197 ⁰С) and exposure to a neutron flux in the range of 1e13 ÷ 1e15 n / cm² are presented.